MRFE6S9135HSR3 - 940MHz 39W RF Power LDMOS MOSFET | NXP
Référence : MRFE6S9135HSR3 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $145 | $145,00 |
| 10 | $132 | $1 320,00 |
| 50 | $121 | $6 050,00 |
| 100 | $115 | $11 500,00 |
| 250 | $108 | $27 000,00 |
MRFE6S9135HSR3 Présentation
RF power MOSFETs (also called RF LDMOS - Laterally Diffused Metal-Oxide Semiconductor) are specialized power transistors engineered to deliver high RF output power at frequencies from HF through ~2 GHz with high gain and efficiency. LDMOS sits within the broader power MOSFET family but uses a laterally diffused drain structure that provides higher breakdown voltage, better thermal performance, and superior RF gain compared to standard vertical MOSFETs. In the system hierarchy, an RF LDMOS sits inside the power amplifier (PA) stage, which is itself part of the RF front-end module of a wireless base station.
Key features include a 21 dB power gain at 940 MHz, 28 V typical drain bias operation, single W-CDMA waveform capability, integrated electrostatic discharge (ESD) protection, and a high ruggedness profile for VSWR mismatched loads. The device is characterized for both CW and pulsed single-carrier W-CDMA waveforms, with peak envelope power (PEP) ratings supporting multi-carrier GSM and LTE-like signals when properly tuned.
The MRFE6S9135HSR3 is internally matched and uses a lateral N-channel enhancement-mode structure fabricated on a high-resistivity silicon substrate. The NI-880S ceramic package provides low thermal resistance (θJC) and excellent RF grounding through its ceramic body and straight leads, which are preferred for high-frequency PCB land patterns when lead inductance must be minimized.
Typical applications include W-CDMA base-station power amplifiers at 900 MHz band, industrial RF heating at 915/940 MHz, RFID readers, and broadband general-purpose RF amplification. Designers choose this part when they need a proven, high-volume production LDMOS for sub-1 GHz base-station PAs.
Designers must provide adequate RF decoupling on the drain and gate bias feeds, maintain the drain-source voltage below the absolute maximum rating, and use a properly matched output network. Thermal management via the package mounting flange is critical because the NI-880S package is designed to be bolted directly to a heatsink with a thin layer of thermal compound.
This page synthesizes distributor pricing, drop-in same-package variants, and practical RF PCB design guidance not found in the standalone NXP datasheet, helping engineers evaluate the MRFE6S9135HSR3 for new and retrofit amplifier designs.
Alternatives de remplacement direct pour MRFE6S9135HSR3 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MRFE6S9135HSR3 (même facteur de forme et même empreinte) — différant par Mounting Type, Output Power (Pout), Power Gain (Gps), Transistor Type.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRFE6S9135HR3
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Voir la fiche technique →MRFE6S9135HSR3 Valeurs maximales et caractéristiques électriques
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Status | Active |
| Type de transistor | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Frequency | 940 MHz (designed up to 1000 MHz) |
| Test Voltage | 28 V |
| Test Current | 1 A |
| Power Gain (Gps) | 21 dB |
| Output Power (Pout) | 39 W average (single W-CDMA, 940 MHz) |
| Drain-Source Voltage Rating | 66 V |
| Drain Current Rating | 10 µA (leakage spec from cross-reference) |
| Boîtier / Format | NI-880S (CASE 465B-03, STYLE 1), ceramic, straight leads |
| Type de montage | Through-hole / chassis-mount with flange bolt-down |
| Lead Free Status | Lead Free |
| Statut RoHS | Compliant per NXP product page |
| Packaging | Tape & Reel (suffix R3, 250-unit per reel) |
Configuration des broches de MRFE6S9135HSR3
| Broche 1 | DRAIN — RF output / drain bias (case-flanged main lead) |
| Broche 2 | GATE — RF input / gate bias lead |
| Broche 3 | SOURCE — Source / ground (case flange is also source) |
| Broche CASE | FLANGE — Source-connected flange, bolt-down thermal and electrical ground |
Zone de fonctionnement sûr (estimated from LDMOS class; specific SOA curves not in provided web data)
Applications typiques
MRFE6S9135HSR3 convient pour 6 applications: W-CDMA 900 MHz Base Station Power Amplifier, Industrial RF Heating at 915/940 MHz, RFID Reader Power Amplifier (UHF 860-960 MHz), Broadband General-Purpose RF Amplification, Multi-Carrier GSM/EDGE Combiner PAs, Public-Safety / Land-Mobile Radio Repeater.
W-CDMA 900 MHz Base Station Power Amplifier
The MRFE6S9135HSR3 is purpose-built for W-CDMA base-station power amplifier final stages at 940 MHz. Its 21 dB power gain and 39 W average W-CDMA output allow a single device to drive a macro-cell PA sector with high linearity. The 28 V drain bias and NI-880S ceramic package support the high DC power and thermal dissipation typical of basestation duty cycles, while LDMOS technology provides the linearity required for W-CDMA modulation. Designers typically place the part between the predriver and the isolator/filter chain.
Recommandé
Industrial RF Heating at 915/940 MHz
Industrial RF heating equipment operating in the 915 MHz or 940 MHz ISM band benefits from the MRFE6S9135HSR3's broadband gain and ruggedness. The 39 W average output delivers sufficient heating power for small-batch plastic welding, drying, or food-processing applications, and the LDMOS die tolerates the high VSWR mismatch that occurs with varying material loads. The 28 V bias simplifies power supply design compared to 50 V alternatives, and the NI-880S package bolts to a chassis for cooling.
Recommandé
RFID Reader Power Amplifier (UHF 860-960 MHz)
UHF RFID readers in the 860-960 MHz band use the MRFE6S9135HSR3 to deliver the high peak pulse power required to interrogate tags at long range. Its 39 W rating supports both fixed-infrastructure and handheld readers, while the broadband response across the global UHF RFID band (ETSI 865-868 MHz and FCC 902-928 MHz) allows a single SKU to serve multiple regions. The LDMOS device's high gain reduces the number of driver stages in the TX chain.
Recommandé
Broadband General-Purpose RF Amplification
For laboratory and broadband general-purpose RF amplifiers, the MRFE6S9135HSR3's 1000 MHz capability makes it a flexible building block. Designers building test-and-measurement amplifiers, RF signal sources, or driver stages for higher-power transmitters benefit from its predictable gain, ruggedness to load mismatch, and standardized NI-880S mounting. The 39 W rating provides ample headroom for CW and pulse applications up to ~30 W saturated output.
Recommandé
Multi-Carrier GSM/EDGE Combiner PAs
Multi-carrier GSM base-station power amplifiers can use the MRFE6S9135HSR3 in the 900 MHz band when linearity is managed with digital predistortion (DPD). Although the part is characterized for single W-CDMA, its broadband response also supports 2-4 carrier GSM/EDGE combinations at reduced per-carrier power. Designers must verify linearity and ACPR under their specific multi-carrier drive conditions using the NXP reference design as a starting point.
Recommandé
Public-Safety / Land-Mobile Radio Repeater
Public-safety radio repeater amplifiers operating in the 900 MHz LMR band can use the MRFE6S9135HSR3 for high-power final stages. The 39 W rating supports the high peak power of land-mobile waveforms, while the rugged NI-880S package tolerates the wide temperature swings typical of outdoor repeater cabinets. The 28 V bias simplifies integration with 24 V battery-backed power systems common in public-safety infrastructure.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MRFE6S9135HSR3 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRFE6S9135HR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Package | NI-880S (CASE 465B-03, STYLE 1, straight leads) | NI-880 (CASE 465B-03, STYLE 2, gull-wing) |
| Frequency | 940 MHz (typ) / up to 1000 MHz | 940 MHz (typ) / up to 1000 MHz - same |
| Output Power (Pout, avg W-CDMA) | 39 W | 39 W - same |
| Power Gain | 21 dB | 21 dB - same |
| Test Voltage | 28 V | 28 V - same |
| Test Current | 1 A | 1 A - same |
| Lead Form | Straight leads | Gull-wing leads |
| Tape & Reel Quantity | 250 (suffix R3) | 250 (suffix R3) |
Principaux différenciateurs
- Same-die drop-in for gull-wing PCB layouts (vs MRFE6S9135HR3)
- Single W-CDMA rated at 39 W average with 21 dB gain (vs MRFE6S9060NR1)
- 1000 MHz broadband capability for global SKU (vs MRFE6VS25GNR1 (50 MHz VHF part))
Notes de conception
The NI-880S ceramic package is designed to be bolted directly to a heatsink or chassis with a thin layer of thermal compound. The case flange is the primary thermal path and is also the source electrical ground. Estimated: at 39 W average RF output with ~50% drain efficiency, the part dissipates roughly 39 W DC; the junction-to-case thermal resistance must be referenced from the datasheet thermal curve and the heatsink selected to keep Tj below 150 C at maximum ambient. Inadequate heatsinking is the most common failure mode for LDMOS in this package.
RF PCB layout for sub-1 GHz LDMOS must use a low-inductance ground via array directly under the package flange and 50-ohm microstrip or stripline transmission lines matched to the device's input/output impedances at the test frequency. Drain and gate bias feeds should be RF-decoupled with high-Q capacitors (typically 10 pF, 100 pF, 1 nF, 10 nF parallel combination) placed as close to the bias leads as possible. Use a small-valued (1-10 ohm) gate resistor to suppress parasitic oscillation.
Do not exceed the 66 V drain-source voltage rating even briefly - inductive kickback from the output matching network can produce voltage transients well above the supply rail. Add a TVS diode or snubber network if VSWR transients are expected. Do not operate the gate above its maximum rating (typically +/-20 V for this family); a gate ESD strike can permanently degrade gain. Always sequence the gate voltage on before the drain voltage to avoid partial turn-on in the load network.
Use a high-thermal-conductivity PCB substrate (Rogers RO4350B or similar) for the output matching network, especially at the higher end of the 1000 MHz band where loss directly reduces Pout and efficiency. The input matching can typically remain on FR-4 since gain is less loss-sensitive than output power. Keep the gate matching network physically separated from the drain matching network to minimize feedback and instability.
Informations de conformité
RoHS and lead-free confirmed per NXP product page and DigiKey listing (2026-10-16). REACH status inferred from NXP compliance statements. AEC-Q100 not applicable - this is an RF power MOSFET for base-station/industrial use, not automotive. Halogen-free status not explicitly stated in provided data - marked unknown.
