SCT3060AL - 650V 39A SiC Trench MOSFET | ROHM
Référence : SCT3060AL ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $6.2 | $6,20 |
| 10 | $5.6 | $56,00 |
| 100 | $4.95 | $495,00 |
| 500 | $4.4 | $2 200,00 |
| 1 000 | $3.95 | $3 950,00 |
SCT3060AL Présentation
A SiC power MOSFET is a type of wide-bandgap power transistor that uses silicon carbide instead of silicon as the semiconductor material. Because silicon carbide has roughly ten times the critical electric field strength of silicon, SiC MOSFETs can support high blocking voltages with thinner, more heavily doped drift regions, which reduces on-state resistance and switching losses. Within the power semiconductor hierarchy, the SCT3060AL belongs to the class of discrete power transistors (MOSFETs, IGBTs, and related switching devices) used as the primary switching elements in power supplies and motor drives.
Key features of the SCT3060AL include its 650 V voltage rating suited to off-line and 400 V DC bus applications, a 39 A current rating for high-power designs, low on-resistance that minimizes conduction loss, fast switching speed that enables high-frequency operation and smaller magnetics, and fast reverse recovery that reduces losses in bridge and synchronous-rectifier topologies.
Technically, the trench-gate structure lowers channel resistance compared with planar SiC MOSFET designs, improving the figure of merit for conduction loss. Compared with equivalent 650 V silicon superjunction MOSFETs and IGBTs, the SiC die offers substantially lower switching energy, allowing designers to raise switching frequency, shrink passive components, and improve overall converter efficiency. The intrinsic body diode provides fast reverse recovery without the tail-current behavior of IGBTs.
Typical applications include server and telecom power supplies, solar power conditioners and photovoltaic inverters, EV charging infrastructure, high-efficiency industrial motor drives, and switching power supplies where 650 V class SiC switching devices improve efficiency and power density.
Design consideration: proper gate-drive voltage is essential to realize the rated low on-resistance, and layout inductance should be minimized to fully exploit the fast switching capability; verify exact RDS(on), threshold, and thermal limits in the ROHM datasheet before finalizing designs.
This page synthesizes verified distributor and manufacturer data, drop-in alternative analysis, pricing guidance, and practical design notes not consolidated in the manufacturer datasheet.
Alternatives de remplacement direct pour SCT3060AL — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
SCT3060ALGC11
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
SCT3080ALGC11
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
SCT3160ALGC11
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
SCT3060AL Valeurs maximales et caractéristiques électriques
| Polarity | N-channel |
| Technology | SiC (Silicon Carbide) Trench MOSFET |
| Drain-Source Voltage (Vdss) | 650 V |
| Continuous Drain Current (Id) | 39 A |
| Boîtier | TO-247 (THD), 3-lead |
| Type de montage | Through Hole |
| Switching Speed | Fast switching (SiC trench) |
| Reverse Recovery | Fast reverse recovery |
| Statut RoHS | Compliant |
| Typical Applications | Server power supplies, solar inverters, EV charging |
Configuration des broches de SCT3060AL
| Broche 1 | Gate — Gate terminal - drive with specified Vgs to control switching |
| Broche 2 | Drain — Drain terminal - connects to high-voltage DC bus / tab |
| Broche 3 | Source — Source terminal - power return and gate-drive reference |
Zone de fonctionnement sûr
Applications typiques
SCT3060AL convient pour 6 applications: Server and Telecom Power Supplies, Solar Power Inverters / Power Conditioners, EV Charging Stations, Industrial Motor Drives, High-Voltage Switching Power Supplies, Battery Discharge and DC Bus Switching.
Server and Telecom Power Supplies
The SCT3060AL fits server and telecom PSU stages such as PFC boost and LLC half/full bridges, where its 650 V rating covers the rectified mains bus and its 39 A rating supports multi-kilowatt output. The SiC trench die switches faster than 650 V silicon MOSFETs, cutting switching energy per cycle so designers can raise switching frequency and shrink the transformer and inductors. Fast reverse recovery reduces losses in bridge legs and synchronous rectification. The ROHM 4-pin SCT3060AR variant targets this market specifically for maximum efficiency.
Recommandé
Solar Power Inverters / Power Conditioners
Solar string inverters use a ~380-400 V DC link, well within the 650 V rating of the SCT3060AL with margin for surge and ringing. In the boost stage and the DC-AC bridge, the SiC trench MOSFET's fast switching speed and low on-resistance reduce both conduction and switching losses, raising conversion efficiency - a direct selling point for grid-tied inverters where every efficiency point counts. Fast reverse recovery helps in hard-switched bridge legs. ROHM explicitly lists solar power conditioners among the target applications of this device family.
Recommandé
EV Charging Stations
EV AC and DC fast chargers rectify three-phase mains to a high-voltage DC bus, then process kilowatts of power through PFC and DC-DC stages. The SCT3060AL's 650 V, 39 A ratings allow compact totem-pole or boost PFC designs at high switching frequency, while its low on-resistance limits conduction loss at full charge current. The SiC die's high-temperature capability supports dense, fan-cooled outdoor cabinets. ROHM positions the SCT3x60AL/AR SiC MOSFET family for EV charging infrastructure requiring high efficiency and power density.
Recommandé
Industrial Motor Drives
In industrial inverters and servo drives, the SCT3060AL can serve as the switching element in three-phase bridge topologies supplied from a rectified 380-400 V DC bus. Its fast switching reduces PWM switching losses, enabling higher carrier frequencies that lower acoustic noise and current ripple in motors, while the 39 A rating covers drives in the several-kilowatt class. Fast reverse recovery benefits hard-switched bridges where freewheeling events occur every PWM cycle. Verify thermal design against the datasheet Rth values for the TO-247 package and heatsink.
Recommandé
High-Voltage Switching Power Supplies
General-purpose offline AC-DC supplies in the 1-5 kW range benefit from the SCT3060AL in boost PFC, forward, half-bridge, and LLC primary-side positions. The 650 V rating provides headroom over the ~380 V rectified bus, and SiC switching speed lets designers push frequency above what silicon superjunction MOSFETs allow at similar loss, shrinking magnetics and EMI filters. The fast body diode reduces stress during transients and hold-up events. Through-hole TO-247 mounting simplifies thermal design with standard heatsinks.
Recommandé
Battery Discharge and DC Bus Switching
High-voltage battery systems, DC bus contactors, and precharge/discharge circuits use the SCT3060AL as a fast, low-loss electronic switch. Its 650 V blocking capability covers 400 V-class battery packs common in energy storage and light EV systems, and the 39 A continuous rating handles sustained load currents with modest conduction loss. Fast switching enables active balancing and rapid fault interruption that mechanical relays cannot match. ROHM's SiC MOSFET family is aimed at such high-efficiency DC power processing stages.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour SCT3060AL — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | SCT3060ALGC11 | SCT3080ALGC11 | SCT3160ALGC11 |
|---|---|---|---|---|
| Package | TO-247 (THD) 3-pin | TO-247 (THD) 3-pin - same | TO-247 (THD) 3-pin - same | TO-247 (THD) 3-pin - same |
| Brand | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
| Drain-Source Voltage | 650 V | 650 V | 650 V | 650 V |
| Technology | SiC trench MOSFET | SiC trench MOSFET | SiC trench MOSFET | SiC trench MOSFET |
| On-Resistance Class | Low (39 A / 60-series class) | Same as SCT3060AL | Higher (80-series class) | Highest (160-series class) |
| Mounting | Through Hole (THD) | Through Hole (THD) | Through Hole (THD) | Through Hole (THD) |
| Drop-in Compatibility | Reference part | Identical part (full ordering code) | Same footprint, higher RDS(on) | Same footprint, highest RDS(on) |
Principaux différenciateurs
- Standard 3-pin TO-247 through-hole footprint (vs SCT3060AR)
- SiC trench die vs silicon superjunction MOSFETs (vs SCT3080ALGC11)
- Fast reverse recovery body diode (vs Equivalent 650 V silicon MOSFETs)
Notes de conception
Gate drive is critical with SiC trench MOSFETs. Drive the SCT3060AL gate with the positive voltage specified in the ROHM datasheet to achieve rated low on-resistance; under-driving raises conduction loss and heating. Use a negative or zero-volt off-state level to prevent dv/dt-induced parasitic turn-on in bridge legs. Estimated: even a 100 mV extra drop across a 39 A path adds roughly 4 W of conduction loss, so confirm RDS(on) at your actual Vgs from the datasheet characteristic curves.
The SCT3060AL switches fast, so power-loop and gate-loop inductance dominate switching loss and ringing. Keep the DC bus decoupling capacitor close to the drain-source loop, route the gate driver traces short with a dedicated Kelvin return to the source pin, and size the external gate resistor to trade switching speed against overshoot. In through-hole TO-247 layouts, minimize the distance between the device and the bus capacitor bank; twisted or laminated bus connections help on higher-power boards.
The TO-247 tab is electrically connected to the drain, so isolation pads or washers are required when mounting to a grounded heatsink - account for the pad's thermal resistance in your junction-temperature estimate. Estimated: junction rise equals power dissipation multiplied by the datasheet Rth(j-c) plus interface resistance; with tens of watts of loss at full load, verify Tj stays within the datasheet maximum with your heatsink and airflow, and derate current at elevated ambient temperature.
Informations de conformité
RoHS compliance indicated per ROHM product listing; REACH, lead-free, halogen-free, and conflict-minerals declarations should be confirmed via ROHM certificate of conformance.
