SS0530_R1_00001 - 30V 500mA Schottky Diode | Panjit | SOD-123
Référence : SS0530_R1_00001 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0.1 | $0,10 |
| 10 | $0.08 | $0,80 |
| 100 | $0.05 | $5,00 |
| 500 | $0.04 | $20,00 |
| 1 000 | $0.035 | $35,00 |
SS0530_R1_00001 Présentation
A Schottky barrier diode is a semiconductor rectifier that uses a metal-semiconductor junction instead of a PN junction, eliminating the minority-carrier charge-storage delay. This places Schottky diodes in the broader hierarchy: diode -> rectifier -> discrete semiconductor -> power component. The Schottky construction yields a lower forward voltage drop and faster switching than standard silicon rectifiers, making SS0530_R1_00001 ideal for low-voltage, high-efficiency power conversion where conduction loss matters more than blocking voltage.
Key features include 30 V reverse voltage rating, 500 mA continuous forward current, low VF of 430 mV at 500 mA to minimize conduction loss, fast switching for high-frequency rectification, a small SOD-123 surface-mount footprint, and tape-and-reel packaging for automated pick-and-place assembly. The device is RoHS compliant per distributor listings. These characteristics make the part a cost-effective choice for low-power DC-DC converters, freewheeling diodes, and reverse-polarity protection circuits.
The Schottky barrier construction inherently limits leakage current and reverse recovery time, so the SS0530_R1_00001 can be used in switching regulators up to several hundred kHz without the switching losses associated with PN-junction rectifiers. Its thermal performance is dominated by the small SOD-123 die, which is suitable for moderate continuous current but requires attention to PCB copper area at full 500 mA load.
Typical applications include low-voltage buck/boost converter freewheeling, DC polarity protection in USB chargers and adapters, signal clamping and OR-ing in low-voltage distribution rails, and small-signal RF detector circuits. The 30 V VRRM also provides ample headroom for 12 V automotive and 24 V industrial rail protection.
When designing with this part, ensure the PCB land pattern follows the SOD-123 standard and provide adequate copper area on both anode and cathode pads for thermal dissipation. At 500 mA continuous forward current, a minimum of 25 mm² of copper per pad is recommended to keep the junction temperature within safe limits.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, providing a single reference for engineers evaluating the SS0530_R1_00001.
Alternatives de remplacement direct pour SS0530_R1_00001 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec SS0530_R1_00001 (même facteur de forme et même empreinte) — différant par Package, RoHS Status, Configuration, Manufacturer, Diode Type.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
SS0530_R1_10001
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
SS0530
✅ Remplacement direct✓ En stock
$0.03 / unité
Voir la fiche technique →SRVBS260NT3G
✅ Remplacement direct✓ En stock
$0.11 / unité
Voir la fiche technique →B0530WS-7-F
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
SS0530_R1_00001 Valeurs maximales et caractéristiques électriques
| Manufacturer | Panjit International Inc. |
| Diode Type | Schottky Barrier Diode (SBD) |
| Configuration | Single, 1 Phase, 1 Element |
| Reverse Voltage (VRRM) | 30 V |
| Average Rectified Forward Current (IF(AV)) | 500 mA |
| Forward Voltage Drop (VF) | 430 mV @ 500 mA |
| Boîtier | SOD-123 |
| Type de montage | Surface Mount |
| Nombre de broches | 2 |
| Packaging | Tape & Reel |
| Statut RoHS | Compliant |
| Technology | Schottky (metal-semiconductor junction) |
Configuration des broches de SS0530_R1_00001
| Broche 1 | Cathode (K) — Cathode terminal - banded end of package |
| Broche 2 | Anode (A) — Anode terminal - unmarked end of package |
Applications typiques
SS0530_R1_00001 convient pour 6 applications: Low-Voltage DC-DC Buck Converter Freewheeling, DC Polarity / Reverse-Battery Protection, OR-ing Diode for Redundant Power Rails, Signal Clamping in Low-Voltage Logic, Small-Signal RF Detector Circuit, Solar Panel Blocking Diode.
Low-Voltage DC-DC Buck Converter Freewheeling
The SS0530_R1_00001's 430 mV forward voltage drop at 500 mA and 30 V VRRM make it a strong choice for low-side freewheeling in buck converters at 3.3 V to 12 V outputs. Placed across the synchronous-rectifier MOSFET or low-side switch, the diode carries inductor current during the switch off-time, preventing voltage spikes across the inductor. Its low VF reduces conduction loss compared to a silicon PN diode, improving converter efficiency by 2-4% at 500 mA load. The SOD-123 footprint enables tight placement next to the switch node for minimal parasitic inductance. Engineers designing 5 V/500 mA point-of-load regulators commonly pair this part with small buck-controller ICs. Trade-off: at high VIN-to-VOUT delta, the 30 V rating limits use to low-voltage buses.
Recommandé
DC Polarity / Reverse-Battery Protection
The SS0530_R1_00001 is widely used in series with the input rail of low-voltage USB chargers and adapter circuits to block reverse-polarity connection. With a 30 V reverse rating and 500 mA forward current, it safely handles 5 V to 12 V input rails typical of consumer chargers. The 430 mV VF adds only modest loss to the series path, while the Schottky construction provides fast turn-off when reverse polarity is applied. Compared to a P-channel MOSFET solution, this diode is lower cost but dissipates more power at high current. Designers typically place a PTC fuse upstream to limit fault current during reverse connection.
Recommandé
OR-ing Diode for Redundant Power Rails
In redundant power supply designs, the SS0530_R1_00001 serves as an OR-ing diode that combines two power sources while blocking reverse current flow between them. The 430 mV forward drop keeps losses manageable at 500 mA load, and the 30 V rating suits both 5 V and 12 V rails. Engineers pair two SS0530 diodes at the output of independent regulators feeding a common load, achieving passive redundancy without complex controller ICs. The trade-off versus a MOSFET-based ideal diode is the 430 mV loss, which becomes significant at higher currents; for sub-500 mA applications this remains an excellent low-cost solution.
Recommandé
Signal Clamping in Low-Voltage Logic
The SS0530_R1_00001's low forward voltage makes it suitable for clamping transient overvoltages on low-voltage logic lines, such as 3.3 V GPIO or I2C buses exposed to ESD events. Placed from signal to ground (cathode to signal), the diode conducts when the signal exceeds VCC + VF, shunting the overvoltage to the supply rail. At 30 V reverse rating, the part tolerates significant transient energy without breakdown. Designers commonly use it in consumer and industrial I/O ports where small board area and low cost matter more than ultra-low capacitance. Trade-off: the ~10 pF junction capacitance limits use above ~10 MHz signal rates.
Recommandé
Small-Signal RF Detector Circuit
The SS0530_R1_00001 functions as a half-wave RF detector or signal rectifier in low-power RF circuits operating below 30 V peak and 500 mA. Its low forward drop enables detection of small RF envelopes (down to ~100 mV) where silicon PN diodes would be too lossy. Common applications include RF power measurement, AM envelope detection, and RSSI circuits in sub-GHz receivers. The Schottky barrier yields good sensitivity at low signal levels, and the SOD-123 package fits standard RF PCB layouts. Engineers often pair this diode with an op-amp follower to buffer the detected DC output.
Recommandé
Solar Panel Blocking Diode
In small solar charging systems up to 30 V open-circuit and 500 mA load, the SS0530_R1_00001 serves as a blocking diode to prevent reverse discharge from the battery back into the solar panel at night. Its low VF maximizes energy harvest from low-voltage panels, and the 30 V rating handles 12 V nominal panels with significant headroom. Engineers place it in series with the panel output, immediately upstream of the charge controller. Compared to Schottky diodes with higher current ratings, this part offers a cost-optimized solution for low-power IoT and remote-sensor solar installations.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour SS0530_R1_00001 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | SS0530_R1_10001 | SS0530 | SRVBS260NT3G | B0530WS-7-F |
|---|---|---|---|---|---|
| Package | SOD-123 | SOD-123 - same | SOD-123 - same | SOD-123 - same | SOD-123 (verify land pattern) |
| Brand | Panjit | Panjit | Panjit | onsemi | Diodes Incorporated |
| Reverse Voltage (VRRM) | 30 V | 30 V | 30 V | 60 V | 30 V |
| Forward Current (IF) | 500 mA | 500 mA | 500 mA | 500 mA | 500 mA |
| Diode Type | Schottky Barrier | Schottky Barrier | Schottky Barrier | Schottky Barrier | Schottky Barrier |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- Lowest VF in 30 V 500 mA SOD-123 class (vs Standard silicon PN diode (1N4148))
- Same-brand second source availability (vs Single-source competitors)
- 30 V rating matches 12 V/24 V rails precisely (vs Higher-rated 40-60 V parts (SS24, SRVBS260NT3G))
Notes de conception
At 500 mA continuous forward current and 430 mV VF, the SS0530_R1_00001 dissipates approximately 215 mW. The SOD-123 package has a typical theta_JA around 200 C/W on a standard 1 oz copper 2-layer board, yielding a junction temperature rise of about 43 C above ambient. Provide at least 25 mm² of copper on each pad to keep junction rise below 30 C; for sustained 500 mA operation near maximum temperature, derate to 350 mA or add additional thermal relief.
The SOD-123 land pattern should follow the JEDEC standard with cathode pad slightly larger than anode pad for thermal symmetry. Keep the trace from the cathode pad short and wide to minimize parasitic inductance, which is critical when the diode is used as a freewheeling element in switching converters. Avoid routing noisy signals (such as switch nodes) directly under the diode to prevent coupling.
Do not use SS0530_R1_00001 in circuits where reverse voltage can exceed 30 V - this will permanently damage the junction. When using as a freewheeling diode, ensure the switch-node voltage spike (including ringing) stays below 30 V under worst-case load conditions. The diode has no avalanche rating specified; adding a TVS across the switch node is recommended for harsh environments.
Informations de conformité
RoHS compliance confirmed by Panjit distributor listings. AEC-Q100 automotive qualification not specified - for automotive applications, request automotive-grade part directly from Panjit. REACH, halogen-free, and conflict minerals status not explicitly listed in provided data.
