STB80NF55L-08-1 - 80A, 55V N-Channel Power MOSFET | STMicroelectronics
Référence : STB80NF55L-08-1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.56 | $25,60 |
| 100 | $2.28 | $228,00 |
| 500 | $2.05 | $1 025,00 |
| 1 000 | $1.85 | $1 850,00 |
STB80NF55L-08-1 Présentation
A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate, allowing efficient switching at high voltages and currents. Power MOSFETs are fundamental components in power electronics, serving as switches in DC-DC converters, motor drivers, and power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs, and are essential for managing power flow in modern electronic systems.
Key features of the STB80NF55L-08-1 include a low on-state resistance (RDS(on)) of typically 8 mΩ at VGS=10V, which minimizes conduction losses and improves efficiency. The device also offers a fast switching speed, with typical rise and fall times in the nanosecond range, enabling high-frequency operation. The gate charge is optimized for low drive requirements, and the device is designed to withstand high-energy pulses in avalanche mode, making it robust for demanding applications.
The STB80NF55L-08-1 utilizes STMicroelectronics' advanced strip layout technology, which reduces internal parasitic inductance and resistance, enhancing switching performance and thermal stability. The device features a rugged design with built-in protection against overcurrent and overvoltage conditions, ensuring reliable operation in harsh environments. The D2PAK package includes an exposed pad for improved heat dissipation, allowing the MOSFET to handle high power dissipation without external heatsinks in many applications.
Typical applications include DC-DC converters, motor control, power supplies, and battery management systems. In automotive applications, it is used in electric power steering, engine control units, and LED lighting. In industrial settings, it is employed in robotics, factory automation, and uninterruptible power supplies. The low RDS(on) and high current capability make it ideal for high-efficiency power conversion.
When designing with this MOSFET, ensure adequate gate drive voltage (typically 10V) to achieve the lowest RDS(on). The device can be driven directly by logic-level controllers if the threshold voltage is suitable, but for full performance, a dedicated gate driver is recommended. Proper PCB layout with short, wide traces for high-current paths and adequate thermal vias under the exposed pad is essential to minimize parasitic inductance and maximize heat dissipation.
Alternatives de remplacement direct pour STB80NF55L-08-1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
STB80NF55L-06
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
STB80NF55L-08
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
IRFB4110
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
IRFB4115
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
FDP80N06
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
STB80NF55L-08-1 Valeurs maximales et caractéristiques électriques
| Drain-to-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at 25°C | 80 A |
| Continuous Drain Current (ID) at 100°C | 56 A |
| Pulsed Drain Current (IDM) | 320 A |
| On-State Resistance (RDS(on)) at VGS=10V | 8 mΩ (typical) |
| Gate-to-Source Voltage (VGS) | ±20 V |
| Gate Threshold Voltage (VGS(th)) | 2 V to 4 V |
| Total Gate Charge (Qg) | 120 nC (typical) |
| Input Capacitance (Ciss) | 4500 pF (typical) |
| Output Capacitance (Coss) | 700 pF (typical) |
| Reverse Transfer Capacitance (Crss) | 200 pF (typical) |
| Power Dissipation (PD) at 25°C | 300 W |
| Operating Junction Temperature (Tj) | -55°C to +175°C |
| Boîtier | D2PAK (TO-263) |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant |
Configuration des broches de STB80NF55L-08-1
| Broche 1 | Gate — Gate terminal for controlling the MOSFET |
| Broche 2 | Drain — Drain terminal, connected to the load |
| Broche 3 | Source — Source terminal, connected to ground |
| Broche 4 | Drain (tab) — Exposed pad is connected to the drain |
Zone de fonctionnement sûr
Applications typiques
STB80NF55L-08-1 convient pour 6 applications: DC-DC Converters, Motor Control, Power Supplies, Battery Management Systems, Automotive Applications, Industrial Automation.
DC-DC Converters
The STB80NF55L-08-1 is ideal for DC-DC converter output stages due to its low RDS(on) of 8 mΩ, which minimizes conduction losses and improves efficiency. In a typical buck converter, the MOSFET switches at high frequency, and its fast switching speed (low gate charge) reduces switching losses. The device's high current rating (80A) supports high-power loads, and the D2PAK package's thermal pad helps dissipate heat generated during operation. For a 12V to 5V conversion at 20A, the power loss due to RDS(on) is only 3.2W, making it suitable for high-efficiency designs. The MOSFET can be driven by a gate driver IC, and proper layout with low-inductance paths is essential to minimize ringing.
Recommandé
Motor Control
In motor control applications, the STB80NF55L-08-1 is used in the H-bridge or half-bridge configuration to drive DC motors or brushless DC motors. Its low RDS(on) reduces heat generation, allowing continuous operation at high currents. The device's avalanche ruggedness ensures it can withstand inductive load spikes without damage. For a 24V motor drawing 30A, the conduction loss is 7.2W, which is manageable with proper heatsinking. The fast switching speed enables PWM control at frequencies up to 20kHz, providing smooth speed control. The MOSFET's gate charge of 120nC requires a gate driver capable of sourcing sufficient current for fast switching.
Recommandé
Power Supplies
The STB80NF55L-08-1 is well-suited for switch-mode power supplies (SMPS) as the main switching element. Its high voltage rating (55V) and current capability (80A) make it suitable for output stages of AC-DC converters and DC-DC modules. The low RDS(on) ensures high efficiency, reducing the need for large heatsinks. In a 500W power supply, the MOSFET may dissipate around 10W, which can be handled by the D2PAK package with adequate copper area. The device's fast switching reduces transformer size, enabling compact designs. Proper snubber circuits may be needed to suppress voltage spikes due to leakage inductance.
Recommandé
Battery Management Systems
In battery management systems (BMS), the STB80NF55L-08-1 is used for charge/discharge control and protection. Its low RDS(on) minimizes power loss during high-current charging and discharging, improving overall system efficiency. The device's ability to handle high pulsed currents (320A) makes it suitable for surge protection. In a 48V battery system, the MOSFET can be used in series with the load to disconnect it during overcurrent or overvoltage conditions. The gate can be driven by a BMS IC, and the device's thermal performance ensures reliable operation in enclosed battery packs. The D2PAK package allows for compact PCB layouts.
Recommandé
Automotive Applications
The STB80NF55L-08-1 is designed for automotive applications such as electric power steering, engine control units, and LED lighting. Its wide junction temperature range (-55°C to +175°C) ensures reliable operation in harsh under-hood environments. The device's low RDS(on) reduces heat generation, which is critical in sealed enclosures. In a 12V automotive system, the MOSFET can switch loads up to 80A, such as motors and heaters. The device is AEC-Q101 qualified, meeting automotive reliability standards. Its fast switching speed enables efficient PWM control for dimming and speed regulation.
Recommandé
Industrial Automation
In industrial automation, the STB80NF55L-08-1 is used in robotic arms, conveyor systems, and CNC machines for motor control and power switching. Its high current rating and low RDS(on) enable efficient operation of high-power actuators. The device's ruggedness against avalanche and overcurrent conditions ensures long-term reliability in demanding environments. In a 48V robotic arm, the MOSFET can drive motors up to 80A, providing high torque. The fast switching speed allows precise control of motor speed and position. The D2PAK package is compatible with standard industrial PCB assembly processes.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour STB80NF55L-08-1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | STB80NF55L-06 | IRFB4110 | FDP80N06 |
|---|---|---|---|---|
| Package | D2PAK (TO-263) | D2PAK (TO-263) | D2PAK (TO-263) | D2PAK (TO-263) |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V | 100 V | 60 V |
| Continuous Drain Current (ID) at 25°C | 80 A | 80 A | 180 A | 80 A |
| On-State Resistance (RDS(on)) | 8 mΩ | 6 mΩ | 4.5 mΩ | 8 mΩ |
| Total Gate Charge (Qg) | 120 nC | 120 nC | 150 nC | 110 nC |
| Power Dissipation (PD) at 25°C | 300 W | 300 W | 370 W | 300 W |
| Operating Junction Temperature | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C |
Principaux différenciateurs
- Low on-state resistance of 8 mΩ (vs STB80NF55L-06)
- High current rating of 80A (vs IRFB4110)
- Automotive-grade reliability (vs FDP80N06)
Notes de conception
The STB80NF55L-08-1 can dissipate up to 300W at 25°C case temperature. In a typical application with 20A load and RDS(on) of 8 mΩ, power dissipation is 3.2W, which is manageable. However, at higher currents, ensure adequate heatsinking. The D2PAK package's exposed pad should be soldered to a large copper area with thermal vias to improve heat transfer to the PCB. For continuous operation at 80A, the power dissipation would be 51.2W, requiring a substantial heatsink or forced air cooling.
For high-current paths, use wide and short traces to minimize parasitic inductance and resistance. Place the MOSFET close to the load and gate driver to reduce loop area. Use multiple vias for the source and drain connections to the inner layers. The gate drive trace should be kept short and away from high-current traces to avoid noise coupling. A gate resistor of 10Ω is recommended to dampen ringing.
Ensure the gate-to-source voltage does not exceed ±20V, as this can damage the oxide layer. Use a gate driver with appropriate voltage levels. Also, be aware of the body diode's reverse recovery, which can cause additional losses in bridge configurations. For inductive loads, add a freewheeling diode or use the MOSFET's avalanche capability, but ensure the energy is within the device's rated limits.
Informations de conformité
RoHS compliant per STMicroelectronics product page. AEC-Q101 qualified for automotive applications. REACH compliance is assumed based on ST's policy.