TPS51200DRCR - 3A Sink/Source DDR Termination Regulator | Texas Instruments
Référence : TPS51200DRCR ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.92 | $1,92 |
| 10 | $1.73 | $17,30 |
| 100 | $1.4 | $140,00 |
| 500 | $1.18 | $590,00 |
| 1 000 | $1.02 | $1 020,00 |
| 3 000 | $0.86 | $2 580,00 |
TPS51200DRCR Présentation
A DDR termination regulator is a specialized power management IC that generates the VTT termination rail for DDR memory buses. Because DDR memory address, command, and data lines require mid-rail termination to VDDQ/2, the VTT supply must both source and sink current depending on bus activity. The TPS51200 belongs to the special-purpose regulator class within the broader power management IC hierarchy (LDO -> linear regulator -> voltage regulator -> PMIC -> termination regulator), bridging general-purpose LDOs and full switching converters in mobile, server, and consumer memory subsystems.
Key features include a 3 A sink/source capability, an integrated VTTREF buffered reference that tracks REFIN/2, support for REFIN from 0.5 V to 1.8 V (covering DDR1 through DDR4), remote sensing at the VO pin for accurate regulation at the load, soft-start control with the PGOOD comparator output, and a minimum 20 uF ceramic output capacitance. The 10-pin VSON (DRC) 3x3 mm package with thermal pad provides adequate heat dissipation while enabling compact memory sub-system layouts.
The device uses a linear push-pull (sourcing NMOS / sinking PMOS) output stage controlled by an internal transconductance error amplifier referenced to VTTREF/2, with built-in current limit and thermal shutdown. The buffered VTTREF output simplifies memory controller reference routing, and the SENSE pin allows Kelvin sensing directly at the DDR termination point to compensate PCB IR drops in high-current memory channels.
Typical applications include DDR memory termination in notebooks, desktops, servers, telecom/datacom line cards, GSM base stations, LCD-TV/PDP-TV, copiers/printers, and set-top boxes. The wide DDR-family support makes it a single solution for designs targeting multiple memory standards.
Design tip: place the minimum 20 uF ceramic output capacitor as close as possible to the VO pin to minimize parasitic inductance, route the SENSE line as a Kelvin trace directly to the memory termination point, and tie VTTREF to the memory controller reference input within 10 mm to avoid reference drift.
This page synthesizes distributor pricing, drop-in same-package alternatives, and practical layout guidance not collected on the TI product page, optimized for engineers selecting a DDR termination LDO for new designs and for cross-replacing the part on existing boards.
Alternatives de remplacement direct pour TPS51200DRCR — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec TPS51200DRCR (même facteur de forme et même empreinte) — différant par Input Voltage Range, Minimum Output Capacitance, Package, VTTREF Output.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
TPS51200DRCT
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
TPS51200QDRCRQ1
✅ Remplacement direct✓ En stock
$0.53 / unité
Voir la fiche technique →TPS51206DSUR
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
TPS51200DRCR-S
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
TPS51200DRCR Valeurs maximales et caractéristiques électriques
| Topologie | Sink/Source LDO (DDR Termination Regulator) |
| Type de sortie | Adjustable (tracks VDDQ/2 via VTTREF) |
| Maximum Source Current | 3 A |
| Maximum Sink Current | 3 A |
| Plage de tension d'entrée | 0.3 V to 6 V |
| REFIN Voltage Range | 0.5 V to 1.8 V (DDR1-DDR4) |
| VTTREF Output | Buffered VTTREF = REFIN/2 |
| Minimum Output Capacitance | 20 uF (ceramic) |
| Dropout (VTT to VIN) | Low-dropout, sink/source capable |
| Remote Sense | Yes (VO_SENSE pin) |
| Power Good | Yes (PGOOD open-drain) |
| Arrêt thermique | Yes |
| Limitation de courant | Yes (internal) |
| Plage de température de fonctionnement | -40 C to +85 C |
| Boîtier | 10-pin VSON (DRC), 3x3 mm with thermal pad |
| Type de montage | Surface Mount |
| Niveau MSL | 2 |
| Supported Memory Standards | DDR, DDR2, DDR3, DDR3L, DDR4 |
| Statut RoHS | Compliant |
| Lead-Free | Yes |
Configuration des broches de TPS51200DRCR
| Broche 1 | VIN — Input supply voltage (0.3 V to 6 V) |
| Broche 2 | VOUT — VTT output (regulated to REFIN/2) |
| Broche 3 | VO_SENSE — Remote sense for VTT output |
| Broche 4 | VTTREF — Buffered VTTREF = REFIN/2 output |
| Broche 5 | REFIN — Reference voltage input from VDDQ divider (0.5 V to 1.8 V) |
| Broche 6 | PGOOD — Power-good open-drain output |
| Broche 7 | EN — Enable input (active high) |
| Broche 8 | GND — Ground |
| Broche 9 | NC — Not connected (per datasheet) |
| Broche 10 | EP — Exposed thermal pad - connect to GND plane |
Applications typiques
TPS51200DRCR convient pour 7 applications: DDR Memory Termination in Notebooks and Desktops, DDR4 Server Memory Termination, Telecom and Datacom Line Cards, GSM Base Station Memory Subsystems, LCD-TV and PDP-TV Main Boards, Copier and Printer Image-Processor Memory, Set-Top Box Memory Termination.
DDR Memory Termination in Notebooks and Desktops
The TPS51200DRCR's 3 A sink/source capability and integrated VTTREF reference make it ideal for DDR3/DDR4 memory termination in notebooks and desktops. The push-pull LDO maintains VTT = VDDQ/2 within tight tolerance during bidirectional memory traffic, ensuring signal integrity on address, command, and data lines. Compared to discrete N-MOS + P-MOS termination designs, the TPS51200DRCR reduces the BOM by integrating the VTT reference buffer, PGOOD comparator, and remote sensing in one 10-pin VSON (3x3 mm) package, freeing board area for battery and SoC routing in thin-and-light notebook designs.
Recommandé
DDR4 Server Memory Termination
In server DIMM modules and high-channel-count DDR4 memory sub-systems, the TPS51200DRCR provides the 3 A continuous sink/source required to hold VTT within the DDR4 specification during heavy read/write bursts across multiple ranks. The remote-sense (VO_SENSE) pin allows Kelvin connection directly at the DIMM connector, compensating PCB IR drop across long memory traces, which is critical when 8 or 16 DIMM sockets share a VTT plane. The 85 C operating range and MSL-2 packaging support typical server backplane thermal environments.
Recommandé
Telecom and Datacom Line Cards
Telecom and datacom line cards require reliable DDR memory termination across extended temperature and long-lifetime operating profiles. The TPS51200DRCR delivers this with thermal shutdown protection, internal current limiting, and a low-dropout topology that maintains VTT regulation even when VIN droops during transient load steps. The buffered VTTREF output simplifies routing to network processors and FPGAs that require a clean reference, reducing BOM count versus designs using a separate reference LDO plus discrete termination transistors.
Recommandé
GSM Base Station Memory Subsystems
GSM base station baseband and packet-processing boards rely on DDR memory for high-throughput data paths. The TPS51200DRCR supports DDR, DDR2, DDR3, DDR3L, and DDR4, enabling design reuse across legacy and current base-station variants. Its 0.5 V to 1.8 V REFIN range directly tracks any VDDQ from 1.0 V to 3.6 V, simplifying the power tree. The integrated VTTREF buffer reduces board area on compact base-station mezzanine cards where every square millimeter counts.
Recommandé
LCD-TV and PDP-TV Main Boards
LCD-TV and PDP-TV main boards need a compact, low-cost DDR termination solution that fits beneath SoC heat sinks with minimal external components. The TPS51200DRCR's 10-pin VSON (3x3 mm) package and minimum 20 uF ceramic output capacitance requirement enable a small footprint with no discrete bypass transistors. The VTTREF buffer eliminates the need for a separate reference LDO, reducing the BOM cost and assembly steps on high-volume consumer TV boards.
Recommandé
Copier and Printer Image-Processor Memory
High-resolution copiers and printers use DDR memory for image processing pipelines that generate burst data traffic. The TPS51200DRCR's fast transient response keeps VTT within spec during print-line bursts, preventing bus errors that would corrupt page data. The PGOOD output can be wired back to the image processor for rail-health monitoring, and the wide DDR-family support enables a single BOM across product lines that span DDR3 and DDR4 image processors.
Recommandé
Set-Top Box Memory Termination
Set-top boxes for streaming and broadcast use DDR memory for demux and decoder SoCs operating 24/7 in warm chassis environments. The TPS51200DRCR's thermal shutdown and current-limit protection prevent runaway failures, while the low-dropout topology sustains VTT regulation from a 1.2 V or 1.35 V intermediate rail generated by the main switching converter. The wide 0.3 V to 6 V VIN tolerance covers both 1.2 V DDR3 and 1.35 V DDR3L power trees with the same BOM.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour TPS51200DRCR — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | TPS51200DRCT | TPS51200QDRCRQ1 | TPS51206DSUR |
|---|---|---|---|---|
| Package | 10-pin VSON (DRC) 3x3 mm | 10-pin VSON (DRC) 3x3 mm - same | 10-pin VSON (DRC) 3x3 mm - same | 10-pin WSON 3x3 mm - same footprint |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Max Source Current | 3 A | 3 A | 3 A | 3 A |
| Max Sink Current | 3 A | 3 A | 3 A | 3 A |
| Buffered VTTREF Output | Yes | Yes | Yes | Yes |
| Remote Sense Pin | Yes | Yes | Yes | Yes |
| Automotive Grade (AEC-Q100) | No | No | Yes | No |
Principaux différenciateurs
- Integrated VTTREF buffered reference eliminates external reference LDO (vs Discrete NMOS+PMOS termination designs)
- Wide REFIN range supports DDR1 through DDR4 in a single BOM (vs TPS51200DRCT (same family, different reel))
- True bidirectional 3 A sink/source capability (vs RT9043GSP (Richtek))
- Automotive grade option available in same package (vs TPS51200QDRCRQ1 (Q1 grade))
Notes de conception
Place the minimum 20 uF ceramic output capacitor as close as possible to the VOUT pin to minimize parasitic inductance, which directly impacts transient response during memory bursts. Route the VO_SENSE trace as a Kelvin connection directly to the memory termination point - do not share the VOUT plane with the sense line, or PCB IR drops will degrade VTT regulation accuracy under load. Connect the exposed thermal pad (EP) to a continuous ground plane with multiple thermal vias to a bottom-layer copper pour for adequate heat dissipation.
The TPS51200DRCR requires VIN to remain above the dropout voltage under all conditions to maintain VTT regulation; design the upstream switching converter to deliver at least 200 mV headroom above VTT at full 3 A source current. Use a low-ESR ceramic input capacitor (10 uF X7R minimum) close to the VIN pin to suppress switching noise from the upstream converter. For DDR4 designs with VDDQ = 1.2 V, derive VTTREF from a precision VDDQ sense divider with 1% resistors to maintain the 0.6 V mid-rail reference accuracy.
Estimated: in worst-case conditions at VIN = 1.8 V, VOUT = 0.9 V, and 3 A continuous source current, power dissipation is (1.8 V - 0.9 V) x 3 A = 2.7 W. The 10-pin VSON DRC package has typical theta_JA around 50 C/W on a standard 4-layer PCB with thermal vias, resulting in a 135 C junction temperature rise above ambient. Derate current at elevated ambient temperatures, or use a larger copper pour on the top layer plus a 2 oz copper inner plane to keep junction below 125 C.
Do not leave the REFIN pin floating - it must be driven by a clean VDDQ-derived voltage or the VTTREF buffer output will drift. Do not omit the PGOOD pull-up resistor if the system SoC requires rail-health monitoring. Avoid long VTTREF traces (>25 mm) which add capacitance and slow the buffer; route directly to the memory controller reference input. The EN pin must be tied high or driven by the SoC power-sequencer; if left floating, the part may not enable reliably.
Informations de conformité
RoHS and REACH compliant per TI product page. Not AEC-Q100 qualified in the standard TPS51200DRCR; choose TPS51200QDRCRQ1 for automotive. Lead-free (Pb-free) packaging confirmed per TI datasheet ordering information.
