TPS51200DRCR - 3A Sink/Source DDR Termination Regulator | Texas Instruments
料号： TPS51200DRCR ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.92 | $1.92 |
| 10 | $1.73 | $17.30 |
| 100 | $1.4 | $140.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $1.02 | $1,020.00 |
| 3,000 | $0.86 | $2,580.00 |
TPS51200DRCR 概述
A DDR termination regulator is a specialized power management IC that generates the VTT termination rail for DDR memory buses. Because DDR memory address, command, and data lines require mid-rail termination to VDDQ/2, the VTT supply must both source and sink current depending on bus activity. The TPS51200 belongs to the special-purpose regulator class within the broader power management IC hierarchy (LDO -> linear regulator -> voltage regulator -> PMIC -> termination regulator), bridging general-purpose LDOs and full switching converters in mobile, server, and consumer memory subsystems.
Key features include a 3 A sink/source capability, an integrated VTTREF buffered reference that tracks REFIN/2, support for REFIN from 0.5 V to 1.8 V (covering DDR1 through DDR4), remote sensing at the VO pin for accurate regulation at the load, soft-start control with the PGOOD comparator output, and a minimum 20 uF ceramic output capacitance. The 10-pin VSON (DRC) 3x3 mm package with thermal pad provides adequate heat dissipation while enabling compact memory sub-system layouts.
The device uses a linear push-pull (sourcing NMOS / sinking PMOS) output stage controlled by an internal transconductance error amplifier referenced to VTTREF/2, with built-in current limit and thermal shutdown. The buffered VTTREF output simplifies memory controller reference routing, and the SENSE pin allows Kelvin sensing directly at the DDR termination point to compensate PCB IR drops in high-current memory channels.
Typical applications include DDR memory termination in notebooks, desktops, servers, telecom/datacom line cards, GSM base stations, LCD-TV/PDP-TV, copiers/printers, and set-top boxes. The wide DDR-family support makes it a single solution for designs targeting multiple memory standards.
Design tip: place the minimum 20 uF ceramic output capacitor as close as possible to the VO pin to minimize parasitic inductance, route the SENSE line as a Kelvin trace directly to the memory termination point, and tie VTTREF to the memory controller reference input within 10 mm to avoid reference drift.
This page synthesizes distributor pricing, drop-in same-package alternatives, and practical layout guidance not collected on the TI product page, optimized for engineers selecting a DDR termination LDO for new designs and for cross-replacing the part on existing boards.
直接替换替代料： TPS51200DRCR ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： TPS51200DRCR （相同外形与封装尺寸） ——差异在于 Input Voltage Range, Minimum Output Capacitance, Package, VTTREF Output.
快速对比工具——选择替代料号进行并排对比：
TPS51200DRCT
✅ 直接替换📋 参考替代料（不在目录中）
TPS51200QDRCRQ1
✅ 直接替换✓ 有现货
$0.53 / 个
查看数据手册 →TPS51206DSUR
✅ 直接替换📋 参考替代料（不在目录中）
TPS51200DRCR-S
✅ 直接替换📋 参考替代料（不在目录中）
TPS51200DRCR 最大额定值与电气特性
| 拓扑 | Sink/Source LDO (DDR Termination Regulator) |
| 输出类型 | Adjustable (tracks VDDQ/2 via VTTREF) |
| Maximum Source Current | 3 A |
| Maximum Sink Current | 3 A |
| 输入电压范围 | 0.3 V to 6 V |
| REFIN Voltage Range | 0.5 V to 1.8 V (DDR1-DDR4) |
| VTTREF Output | Buffered VTTREF = REFIN/2 |
| Minimum Output Capacitance | 20 uF (ceramic) |
| Dropout (VTT to VIN) | Low-dropout, sink/source capable |
| Remote Sense | Yes (VO_SENSE pin) |
| Power Good | Yes (PGOOD open-drain) |
| 热关断 | Yes |
| 限流 | Yes (internal) |
| 工作温度范围 | -40 C to +85 C |
| 封装 | 10-pin VSON (DRC), 3x3 mm with thermal pad |
| 安装类型 | Surface Mount |
| MSL 等级 | 2 |
| Supported Memory Standards | DDR, DDR2, DDR3, DDR3L, DDR4 |
| RoHS 状态 | Compliant |
| Lead-Free | Yes |
TPS51200DRCR 引脚配置
| 引脚 1 | VIN — Input supply voltage (0.3 V to 6 V) |
| 引脚 2 | VOUT — VTT output (regulated to REFIN/2) |
| 引脚 3 | VO_SENSE — Remote sense for VTT output |
| 引脚 4 | VTTREF — Buffered VTTREF = REFIN/2 output |
| 引脚 5 | REFIN — Reference voltage input from VDDQ divider (0.5 V to 1.8 V) |
| 引脚 6 | PGOOD — Power-good open-drain output |
| 引脚 7 | EN — Enable input (active high) |
| 引脚 8 | GND — Ground |
| 引脚 9 | NC — Not connected (per datasheet) |
| 引脚 10 | EP — Exposed thermal pad - connect to GND plane |
典型应用
TPS51200DRCR 适用于 7 应用s: DDR Memory Termination in Notebooks and Desktops, DDR4 Server Memory Termination, Telecom and Datacom Line Cards, GSM Base Station Memory Subsystems, LCD-TV and PDP-TV Main Boards, Copier and Printer Image-Processor Memory, Set-Top Box Memory Termination.
DDR Memory Termination in Notebooks and Desktops
The TPS51200DRCR's 3 A sink/source capability and integrated VTTREF reference make it ideal for DDR3/DDR4 memory termination in notebooks and desktops. The push-pull LDO maintains VTT = VDDQ/2 within tight tolerance during bidirectional memory traffic, ensuring signal integrity on address, command, and data lines. Compared to discrete N-MOS + P-MOS termination designs, the TPS51200DRCR reduces the BOM by integrating the VTT reference buffer, PGOOD comparator, and remote sensing in one 10-pin VSON (3x3 mm) package, freeing board area for battery and SoC routing in thin-and-light notebook designs.
推荐
DDR4 Server Memory Termination
In server DIMM modules and high-channel-count DDR4 memory sub-systems, the TPS51200DRCR provides the 3 A continuous sink/source required to hold VTT within the DDR4 specification during heavy read/write bursts across multiple ranks. The remote-sense (VO_SENSE) pin allows Kelvin connection directly at the DIMM connector, compensating PCB IR drop across long memory traces, which is critical when 8 or 16 DIMM sockets share a VTT plane. The 85 C operating range and MSL-2 packaging support typical server backplane thermal environments.
推荐
Telecom and Datacom Line Cards
Telecom and datacom line cards require reliable DDR memory termination across extended temperature and long-lifetime operating profiles. The TPS51200DRCR delivers this with thermal shutdown protection, internal current limiting, and a low-dropout topology that maintains VTT regulation even when VIN droops during transient load steps. The buffered VTTREF output simplifies routing to network processors and FPGAs that require a clean reference, reducing BOM count versus designs using a separate reference LDO plus discrete termination transistors.
推荐
GSM Base Station Memory Subsystems
GSM base station baseband and packet-processing boards rely on DDR memory for high-throughput data paths. The TPS51200DRCR supports DDR, DDR2, DDR3, DDR3L, and DDR4, enabling design reuse across legacy and current base-station variants. Its 0.5 V to 1.8 V REFIN range directly tracks any VDDQ from 1.0 V to 3.6 V, simplifying the power tree. The integrated VTTREF buffer reduces board area on compact base-station mezzanine cards where every square millimeter counts.
推荐
LCD-TV and PDP-TV Main Boards
LCD-TV and PDP-TV main boards need a compact, low-cost DDR termination solution that fits beneath SoC heat sinks with minimal external components. The TPS51200DRCR's 10-pin VSON (3x3 mm) package and minimum 20 uF ceramic output capacitance requirement enable a small footprint with no discrete bypass transistors. The VTTREF buffer eliminates the need for a separate reference LDO, reducing the BOM cost and assembly steps on high-volume consumer TV boards.
推荐
Copier and Printer Image-Processor Memory
High-resolution copiers and printers use DDR memory for image processing pipelines that generate burst data traffic. The TPS51200DRCR's fast transient response keeps VTT within spec during print-line bursts, preventing bus errors that would corrupt page data. The PGOOD output can be wired back to the image processor for rail-health monitoring, and the wide DDR-family support enables a single BOM across product lines that span DDR3 and DDR4 image processors.
推荐
Set-Top Box Memory Termination
Set-top boxes for streaming and broadcast use DDR memory for demux and decoder SoCs operating 24/7 in warm chassis environments. The TPS51200DRCR's thermal shutdown and current-limit protection prevent runaway failures, while the low-dropout topology sustains VTT regulation from a 1.2 V or 1.35 V intermediate rail generated by the main switching converter. The wide 0.3 V to 6 V VIN tolerance covers both 1.2 V DDR3 and 1.35 V DDR3L power trees with the same BOM.
推荐
推荐产品汇总
工程参考数据： TPS51200DRCR ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | TPS51200DRCT | TPS51200QDRCRQ1 | TPS51206DSUR |
|---|---|---|---|---|
| Package | 10-pin VSON (DRC) 3x3 mm | 10-pin VSON (DRC) 3x3 mm - same | 10-pin VSON (DRC) 3x3 mm - same | 10-pin WSON 3x3 mm - same footprint |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Max Source Current | 3 A | 3 A | 3 A | 3 A |
| Max Sink Current | 3 A | 3 A | 3 A | 3 A |
| Buffered VTTREF Output | Yes | Yes | Yes | Yes |
| Remote Sense Pin | Yes | Yes | Yes | Yes |
| Automotive Grade (AEC-Q100) | No | No | Yes | No |
关键差异点
- Integrated VTTREF buffered reference eliminates external reference LDO （对比 Discrete NMOS+PMOS termination designs)
- Wide REFIN range supports DDR1 through DDR4 in a single BOM （对比 TPS51200DRCT (same family, different reel))
- True bidirectional 3 A sink/source capability （对比 RT9043GSP (Richtek))
- Automotive grade option available in same package （对比 TPS51200QDRCRQ1 (Q1 grade))
设计说明
Place the minimum 20 uF ceramic output capacitor as close as possible to the VOUT pin to minimize parasitic inductance, which directly impacts transient response during memory bursts. Route the VO_SENSE trace as a Kelvin connection directly to the memory termination point - do not share the VOUT plane with the sense line, or PCB IR drops will degrade VTT regulation accuracy under load. Connect the exposed thermal pad (EP) to a continuous ground plane with multiple thermal vias to a bottom-layer copper pour for adequate heat dissipation.
The TPS51200DRCR requires VIN to remain above the dropout voltage under all conditions to maintain VTT regulation; design the upstream switching converter to deliver at least 200 mV headroom above VTT at full 3 A source current. Use a low-ESR ceramic input capacitor (10 uF X7R minimum) close to the VIN pin to suppress switching noise from the upstream converter. For DDR4 designs with VDDQ = 1.2 V, derive VTTREF from a precision VDDQ sense divider with 1% resistors to maintain the 0.6 V mid-rail reference accuracy.
Estimated: in worst-case conditions at VIN = 1.8 V, VOUT = 0.9 V, and 3 A continuous source current, power dissipation is (1.8 V - 0.9 V) x 3 A = 2.7 W. The 10-pin VSON DRC package has typical theta_JA around 50 C/W on a standard 4-layer PCB with thermal vias, resulting in a 135 C junction temperature rise above ambient. Derate current at elevated ambient temperatures, or use a larger copper pour on the top layer plus a 2 oz copper inner plane to keep junction below 125 C.
Do not leave the REFIN pin floating - it must be driven by a clean VDDQ-derived voltage or the VTTREF buffer output will drift. Do not omit the PGOOD pull-up resistor if the system SoC requires rail-health monitoring. Avoid long VTTREF traces (>25 mm) which add capacitance and slow the buffer; route directly to the memory controller reference input. The EN pin must be tied high or driven by the SoC power-sequencer; if left floating, the part may not enable reliably.
合规信息
RoHS and REACH compliant per TI product page. Not AEC-Q100 qualified in the standard TPS51200DRCR; choose TPS51200QDRCRQ1 for automotive. Lead-free (Pb-free) packaging confirmed per TI datasheet ordering information.
