MPX2050D vs MPX2050GP השוואה
השוואה מפורטת זה לצד זה של MPX2050D מאת STMicroelectronics ו MPX2050GP מאת NXP Semiconductors. השווה מפרטים עיקריים, פרמטרים חשמליים, אריזה, סטטוס מחזור חיים, תמחור וזמינות כדי לקבוע את הרכיב הטוב ביותר לדרישות העיצוב שלך.
STMicroelectronics
MPX2050D - 50 kPa Differential Pressure Sensor | STMicroelectronics
MPX2050D ✓ פעילהשוואת מפרטים
| פרמטר | MPX2050D | MPX2050GP |
|---|---|---|
| מותג | STMicroelectronics | NXP Semiconductors |
| קטגוריה | Pressure Sensors | Pressure Sensors |
| סטטוס מחזור חיים | פעיל | פעיל |
| Pressure Type | Differential | Vented Gauge |
| Operating Pressure Range | 0 kPa to 50 kPa (0 PSI to 7.25 PSI) | 0 kPa to 50 kPa (0 PSI to 7.25 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | [DATA_NEEDED: maximum overload pressure] |
| סוג פלט | Analog voltage (Wheatstone bridge, differential) | Analog Wheatstone Bridge (mV) |
| Output Voltage Span | 0 mV to 40 mV (at 10 V excitation, 50 kPa) | — |
| Sensitivity (typical) | 0.45 mV/kPa (at 10 V excitation) | — |
| Excitation Voltage | 10 V DC (typical), [DATA_NEEDED: max Vex] | — |
| Linearity | ±0.5% (typical, full scale) | +/-0.05% to +/-0.1% of FSS (typ) |
| Accuracy | ±0.05% to ±0.2% (0°C to 85°C, Vex = 10 V) | — |
| טמפרטורת פעולה | -40°C to +125°C | 0C to +85C |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | [DATA_NEEDED: storage temperature range] |
| Response Time | 5 kHz (resonance-limited, [DATA_NEEDED: rise time in ms]) | [DATA_NEEDED: response time / bandwidth] |
| Bridge Resistance | 1.0 kΩ to 4.5 kΩ (input/output, typical [DATA_NEEDED: exact value]) | — |
| מארז | 4-SIP Module (Unibody, ported) | — |
| Port Configuration | Dual inlet (differential) | — |
| סוג הרכבה | Through-hole SIP | Through-Hole (SIP, vertical) |
| סטטוס RoHS | Compliant (per ST product page) | — |
| רמת MSL | [DATA_NEEDED: MSL rating] | — |
| Full-Scale Output (Typ @ 10 V) | — | 40 mV (4 mV/V) |
| Zero Offset (Typ) | — | 0 mV |
| Supply / Excitation Voltage | — | 10 V typical (max 16 V per datasheet) |
| Pressure Hysteresis | — | < 0.1% of FSS |
| Port Style | — | Male 0.19" (4.93 mm) Tube |
| מארז / Case | — | 4-SIP Module (Case 344B-01) |
| Technology | — | Silicon Piezoresistive, MEMS |
| Diaphragm Material | — | Monolithic silicon with integrated strain gauge |
| Compensation | — | On-chip temperature compensated and laser-trimmed |
| Lead-Free / RoHS | — | Yes (RoHS compliant) |