2ED2410EMXUMA1 - Dual High-Side N-MOSFET Gate Driver | Infineon
MPN: 2ED2410EMXUMA1 ✓ פעיל2ED2410EMXUMA1 סקירה
A gate driver IC is a power-management semiconductor that translates low-current logic-level control signals (from a microcontroller or ASIC) into the high-current drive required to switch a discrete power MOSFET. The 2ED2410-EM belongs to the high-side gate driver category, meaning it drives a MOSFET whose source sits at a switching node (typically ground-referenced load) rather than the positive rail. High-side drivers are essential in automotive load-switching, body-electronics, and power-distribution modules where the load must be referenced to chassis ground for safety and diagnostics.
Key features of the 2ED2410EMXUMA1 include integrated charge-pump boost for 100% duty-cycle operation, an enable/shutdown pin, overcurrent protection (OCP), and Infineon's proprietary interleaved conduction protection that prevents cross-conduction between the two outputs. Logic inputs are compatible with both 5 V and 3.3 V microcontrollers, with internal pull-down resistors allowing direct MCU connection. The device is qualified for automotive use per AEC-Q100 with an operating junction temperature up to +150 °C.
Architecturally, the 2ED2410-EM integrates a charge pump that maintains gate-source voltage above the MOSFET threshold even when the output is held continuously ON. This eliminates the need for an external bootstrap capacitor required by traditional half-bridge drivers. The two outputs can drive independent N-channel MOSFETs in parallel for higher current loads, or be used sequentially for OR-ing or load-sharing topologies. Built-in diagnostic features report fault conditions back to the MCU via the logic interface.
Typical applications include automotive smart high-side switches replacing mechanical relays, body control modules (BCM), LED driver front-ends, DC-DC converter pre-drivers, and industrial 24 V solenoid/valve drivers. The dual-output architecture particularly suits H-bridge or back-to-back MOSFET configurations in power distribution boxes.
When designing with this part, ensure adequate thermal copper under the exposed pad of the PG-TSDSO-24 package. The charge-pump output capacitance and MOSFET gate charge directly determine the achievable PWM switching frequency and duty-cycle range.
חלופות תחליף ישיר עבור 2ED2410EMXUMA1 — אותו מארז, תואם פין-לפין. חלקים במארז שונה הדורשים עיבוד מחדש של ה-PCB אינם נכללים.
וריאנטים בסדרה זו
דגמים מאותה סדרה התואמים Drop-in עם 2ED2410EMXUMA1 (אותו גורם צורה וטביעת רגל) — שונים ב Operating Temperature Range, Package, Protection Features, Number of Channels, Number of Outputs.
2ED2410-EM
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
2ED2410EMXUMA2
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
BTS70402EPGXUMA1
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←2EDR8258XXUMA1
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←TLE7244SLXUMA1
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
2ED2410EMXUMA1 דירוגים מרביים ומאפיינים חשמליים
| Driver Type | High-Side N-Channel MOSFET Gate Driver |
| מספר יציאות | 2 (independent) |
| Configuration | Non-Inverting |
| Supply Voltage Range (VS) | 8 V to 36 V |
| Logic/VBAT Voltage Range | 3 V to 58 V |
| Source Current (typ.) | 175 mA |
| Sink Current (typ.) | 350 mA |
| זמן עלייה | 2 µs |
| זמן ירידה | 7 µs |
| טווח טמפרטורת פעולה | -40 °C to +150 °C |
| מארז | PG-TSDSO-24 (exposed pad) |
| סוג הרכבה | Surface Mount |
| Logic Input Compatibility | 3.3 V and 5 V MCU |
| Protection Features | Enable/Shutdown, Overcurrent Protection (OCP), Interleaved Conduction Protection, Charge Pump |
| Automotive Qualification | AEC-Q100 |
| סטטוס RoHS | Compliant |
תצורת פינים של 2ED2410EMXUMA1
| פין 1 | GND — Ground |
| פין 2 | VS — Supply voltage |
| פין 3 | IN1 — Logic input 1 (3.3 V / 5 V compatible) |
| פין 4 | IN2 — Logic input 2 (3.3 V / 5 V compatible) |
| פין 5 | EN — Enable input (active high) |
| פין 6 | VCP — Charge pump output |
| פין 7 | CSN — Current sense negative input |
| פין 8 | CSP — Current sense positive input |
| פין 9 | OUT1 — Gate drive output 1 |
| פין 10 | SRC1 — Source connection 1 |
| פין 11 | OUT2 — Gate drive output 2 |
| פין 12 | SRC2 — Source connection 2 |
| פין 13 | NC — Not connected (per datasheet) |
| פין 14 | NC — Not connected (per datasheet) |
| פין 15 | NC — Not connected (per datasheet) |
| פין 16 | NC — Not connected (per datasheet) |
| פין 17 | NC — Not connected (per datasheet) |
| פין 18 | NC — Not connected (per datasheet) |
| פין 19 | NC — Not connected (per datasheet) |
| פין 20 | NC — Not connected (per datasheet) |
| פין 21 | NC — Not connected (per datasheet) |
| פין 22 | NC — Not connected (per datasheet) |
| פין 23 | NC — Not connected (per datasheet) |
| פין 24 | NC — Not connected (per datasheet) |
יישומים טיפוסיים
2ED2410EMXUMA1 מתאים עבור 6 יישוםs: Automotive Smart High-Side Relay Replacement, 24 V Industrial Solenoid and Valve Drivers, Body Control Module (BCM) Load Drivers, DC-DC Converter Pre-Driver Stage, LED Front-End Driver for Automotive Lighting, Power Distribution Box and Load Shedding.
Automotive Smart High-Side Relay Replacement
The 2ED2410EMXUMA1 replaces mechanical automotive relays with solid-state high-side switches driving external N-channel MOSFETs. Its 8 V to 36 V supply range covers 12 V and 24 V vehicle buses, while 175 mA source / 350 mA sink drive capability ensures fast switching of MOSFETs with several hundred nC of total gate charge. According to the Infineon datasheet, the integrated charge pump eliminates bootstrap capacitors required by half-bridge drivers, simplifying PCB layout and improving reliability in body-control modules where the load (headlamps, horns, seat heaters) is chassis-referenced for safety diagnostics.
מומלץ
24 V Industrial Solenoid and Valve Drivers
The 2ED2410EMXUMA1 drives 24 V solenoid coils, hydraulic valves, and pneumatic actuators in industrial automation systems. Its 36 V supply rating tolerates the 24 V nominal plus inductive transients from solenoid turn-off, while the -40 °C to +150 °C junction range supports outdoor cabinets and factory-floor installations. According to Infineon documentation, the integrated overcurrent protection shuts down the output within microseconds when a stuck-valve or shorted-coil fault is detected, protecting both the MOSFET and the harness from thermal damage during continuous industrial duty cycles.
מומלץ
Body Control Module (BCM) Load Drivers
The 2ED2410EMXUMA1 drives multiple loads from a single BCM by exploiting its two independent outputs - one driver can switch a high-current headlamp MOSFET while the other handles a lower-current courtesy-light MOSFET. According to Infineon's datasheet, the enable/shutdown pin allows the MCU to individually control each output, and the interleaved conduction protection prevents cross-conduction if both outputs are commanded on simultaneously, a critical requirement when the BCM handles safety-related lighting functions requiring ASIL-rated fault coverage.
מומלץ
DC-DC Converter Pre-Driver Stage
The 2ED2410EMXUMA1 can serve as the pre-driver for the high-side N-channel MOSFET in a 12 V-to-low-voltage buck converter, where the high-side switch must be driven above the switching node. According to the Infineon datasheet, the internal charge pump maintains VGS above the threshold even at 100% duty cycle, eliminating the need for an external bootstrap circuit and reducing BOM cost. The 175 mA source current drives MOSFETs with moderate gate charge at switching frequencies up to 50 kHz, suitable for auxiliary power rails in 12 V / 24 V automotive and industrial systems.
מומלץ
LED Front-End Driver for Automotive Lighting
The 2ED2410EMXUMA1 drives the high-side disconnect MOSFET in series with automotive LED strings, enabling PWM dimming of headlamps, daytime running lights, and tail-lights. Its 350 mA sink current rapidly turns off the MOSFET for clean PWM edges, while the 175 mA source current supports fast turn-on to minimize switching losses. According to Infineon documentation, the logic-level 3.3 V/5 V inputs connect directly to the BCM's MCU PWM outputs, and the integrated overcurrent protection trips within microseconds when an LED short-circuit fault occurs, protecting the harness from thermal runaway.
מומלץ
Power Distribution Box and Load Shedding
The 2ED2410EMXUMA1 enables intelligent power distribution in 12 V / 24 V distribution boxes, where individual circuits must be switched and current-monitored. According to the Infineon datasheet, the overcurrent protection integrates with a current-sense resistor on the source path to provide cycle-by-cycle current limiting and latched fault reporting back to the vehicle's central body computer via the logic interface. The dual-output configuration allows one driver to handle the main fuse-protected feed while the second handles a switched accessory tap, both in a single PG-TSDSO-24 footprint.
מומלץ
סיכום מוצרים מומלצים
נתוני עזר הנדסיים עבור 2ED2410EMXUMA1 — השוואה, הנחיות תכנון ומידע על תאימות.
מדריך בחירה
השוואה עם חלופות
| פרמטר | מוצר זה | 2ED2410-EM | 2ED2410EMXUMA2 | BTS70402EPGXUMA1 | 2EDR8258XXUMA1 | TLE7244SLXUMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TSDSO-24 | PG-TSDSO-24 - same | PG-TSDSO-24 - same | PG-TSDSO-24 - same | PG-TSDSO-24 - same | PG-TSDSO-24 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Driver Type | Dual high-side gate driver | Dual high-side gate driver | Dual high-side gate driver | Integrated PROFET high-side switch | Dual high-side gate driver | Quad low-side driver |
| Supply Voltage Range | 8 V to 36 V | 8 V to 36 V | 8 V to 36 V | 8 V to 18 V | 6 V to 36 V | 4.5 V to 28 V |
| Charge Pump Integrated | Yes | Yes | Yes | N/A (integrated FET) | Yes | No (low-side) |
| Automotive Qualification | AEC-Q100 | AEC-Q100 | AEC-Q100 | AEC-Q100 | AEC-Q100 | AEC-Q100 |
| Operating Temperature | -40 °C to +150 °C | -40 °C to +150 °C | -40 °C to +150 °C | -40 °C to +150 °C | -40 °C to +150 °C | -40 °C to +150 °C |
מבדילים עיקריים
- Integrated charge pump enables 100% duty cycle without external bootstrap (לעומתHalf-bridge gate drivers (e.g., 2ED21064S06JXUMA1))
- Dual independent outputs in single PG-TSDSO-24 footprint (לעומתSingle-output high-side drivers)
- 3.3 V and 5 V MCU-compatible logic inputs without level shifters (לעומת12 V logic-input gate drivers)
- Interleaved conduction protection between outputs (לעומתDiscrete dual-MOSFET solutions without interlock)
הערות תכנון
The PG-TSDSO-24 package dissipates gate-drive losses (typically <100 mW at 25 kHz) but its exposed pad must be soldered to a thermal copper pour of at least 100 mm² on the top layer for the datasheet-rated thermal resistance. In continuous 100% duty-cycle operation the charge pump contributes ~30 mW of additional dissipation; account for this in junction temperature calculations when designing sealed enclosures. Estimated: at 25 kHz switching with 50 nC total gate charge, switching losses dominate at ~75 mW per channel.
Place the current-sense resistor between the MOSFET source and GND as close as possible to the driver IC, keeping the CSP/CSN traces short and symmetric to avoid ground-bounce-induced false OCP trips. The VS decoupling capacitor must be within 5 mm of the VS pin with a 100 nF ceramic in parallel with the bulk capacitor. According to Infineon layout guidance, route the OUT1/OUT2 gate-drive traces away from the CSN sense trace to minimize coupling, and use a 4-layer PCB with a dedicated ground plane for best EMI performance.
Do not exceed the absolute maximum VBAT of 58 V on the logic pins - load-dump transients in 24 V trucks can reach 58 V, requiring an external TVS clamp if the harness is exposed. The EN pin requires a small RC network (10 kΩ + 100 nF typical) per Infineon's datasheet to stabilize the internal reference; omitting this network causes intermittent enable failures. The interleaved conduction protection only prevents cross-conduction between OUT1 and OUT2; it does not protect against shoot-through in a discrete H-bridge built with two 2ED2410-EM devices.
Use separate analog and power ground planes joined at a single point near the driver's GND pin. Keep high-current paths (VS, OUT, SRC) on the top and bottom layers with wide copper pours to minimize parasitic inductance that can overshoot the MOSFET's VGS rating. The exposed thermal pad must have a continuous solder paste stencil aperture covering >70% of the pad area to meet the IPC-A-610 thermal and mechanical reliability requirements for automotive grade-2 assemblies.
מידע על תאימות
AEC-Q100 qualified for automotive applications per Infineon product page. RoHS and REACH compliant per JLCPCB listing. Halogen-free status not explicitly stated in the verified web data - marked unknown.
