IS61WV102416DBLL-10TLI - 16Mb Async SRAM 1Mx16 10ns | ISSI
MPN: IS61WV102416DBLL-10TLI ✓ פעילIS61WV102416DBLL-10TLI סקירה
Asynchronous static RAM (SRAM) is a volatile memory technology that retains data as long as power is applied, without the refresh cycles required by DRAM. Within the broader memory hierarchy, SRAM sits closest to the processor because of its sub-15 ns access times; it is used for cache, look-up tables, scratch-pad buffers, and FIFO storage in networking, industrial, and embedded systems. Compared with synchronous SRAM (such as QDR or DDR SRAM), asynchronous SRAM uses simple chip-enable, output-enable, and write-enable control signals and is ideal for glue-less processor bus interfaces.
The IS61WV102416DBLL-10TLI provides fully static operation (no clock required), TTL-compatible I/O levels, common data-in/data-out bus architecture, and an active-low output enable for bus sharing. Power consumption is minimized through a Chip Enable power-down mode, and the device supports industrial temperature range operation. The CMOS fabrication process delivers high noise immunity and low standby current, both of which are critical for battery-backed or energy-conscious designs.
Typical applications include industrial controllers, networking line cards, routers and switches requiring fast look-up tables, automotive telematics (non-safety-critical subsystems), medical instrumentation buffers, RAID controllers, and any embedded CPU/MCU design that needs a large, low-latency external data store beyond the on-chip SRAM budget. The wide word width (x16) is well matched to 16-bit and 32-bit microcontrollers and DSPs.
When designing with this device, keep in mind that asynchronous SRAM bandwidth is limited by the controller's ability to issue back-to-back read or write strobes, so the 10 ns access time implies roughly 100 MHz equivalent single-transfer throughput per cycle. Decoupling and signal routing must be handled carefully on long busloads to maximize margin.
This page synthesizes distributor pricing, drop-in alternative cross-references, and practical design notes that go beyond the manufacturer datasheet to help engineers evaluate and qualify the part quickly.
חלופות תחליף ישיר עבור IS61WV102416DBLL-10TLI — אותו מארז, תואם פין-לפין. חלקים במארז שונה הדורשים עיבוד מחדש של ה-PCB אינם נכללים.
IS61WV102416DBLL-10TLI-TR
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
IS61WV102416DALL-10TLI
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
IS61WV102416BLL-10TLI
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
AS7C31016B-10TIN
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
CY7C1061AV33-10ZXI
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
IS61WV102416DBLL-10TLI דירוגים מרביים ומאפיינים חשמליים
| סוג זיכרון | Asynchronous SRAM (Static RAM) |
| Memory Organization | 1M words x 16 bits |
| Memory Density | 16 Mbit (2 MB) |
| Supply Voltage (VCC) | 2.4 V to 3.6 V (3.3 V nominal) |
| Access Time | 10 ns |
| סוג ממשק | Parallel, asynchronous |
| Bus Width | 16 bits |
| טמפרטורת פעולה | -40 C to +85 C (Industrial) |
| מארז | 48-pin TSOP-I |
| סוג הרכבה | Surface Mount |
| I/O Levels | TTL-compatible |
| Output Enable | Yes, active-low (OE-bar) |
| Chip Enable | Yes, active-low (CE-bar / CE1, CE2) |
| Write Enable | Yes, active-low (WE-bar) |
| Operating Mode | Fully static, no clock required |
| סטטוס RoHS | Compliant |
| רמת MSL | 3 (per JEDEC J-STD-020) |
תצורת פינים של IS61WV102416DBLL-10TLI
| פין 1 | NC — Not connected (per datasheet) |
| פין 2 | NC — Not connected (per datasheet) |
| פין 3 | NC — Not connected (per datasheet) |
| פין 4 | A19 — Address input 19 |
| פין 5 | A18 — Address input 18 |
| פין 6 | A17 — Address input 17 |
| פין 7 | A16 — Address input 16 |
| פין 8 | A15 — Address input 15 |
| פין 9 | A14 — Address input 14 |
| פין 10 | A13 — Address input 13 |
| פין 11 | A12 — Address input 12 |
| פין 12 | OE-bar — Output Enable (active low) |
| פין 13 | UB-bar — Upper Byte Enable (active low) |
| פין 14 | LB-bar — Lower Byte Enable (active low) |
| פין 15 | I/O15 — Data I/O 15 |
| פין 16 | I/O14 — Data I/O 14 |
| פין 17 | I/O13 — Data I/O 13 |
| פין 18 | I/O12 — Data I/O 12 |
| פין 19 | I/O11 — Data I/O 11 |
| פין 20 | I/O10 — Data I/O 10 |
| פין 21 | I/O9 — Data I/O 9 |
| פין 22 | I/O8 — Data I/O 8 |
| פין 23 | VCC — Power supply (2.4 V to 3.6 V) |
| פין 24 | VSS — Ground |
| פין 25 | I/O7 — Data I/O 7 |
| פין 26 | I/O6 — Data I/O 6 |
| פין 27 | I/O5 — Data I/O 5 |
| פין 28 | I/O4 — Data I/O 4 |
| פין 29 | I/O3 — Data I/O 3 |
| פין 30 | I/O2 — Data I/O 2 |
| פין 31 | I/O1 — Data I/O 1 |
| פין 32 | I/O0 — Data I/O 0 |
| פין 33 | CE1-bar — Chip Enable 1 (active low) |
| פין 34 | CE2 — Chip Enable 2 (active high) |
| פין 35 | A0 — Address input 0 |
| פין 36 | A1 — Address input 1 |
| פין 37 | A2 — Address input 2 |
| פין 38 | A3 — Address input 3 |
| פין 39 | A4 — Address input 4 |
| פין 40 | A5 — Address input 5 |
| פין 41 | A6 — Address input 6 |
| פין 42 | A7 — Address input 7 |
| פין 43 | A8 — Address input 8 |
| פין 44 | A9 — Address input 9 |
| פין 45 | A10 — Address input 10 |
| פין 46 | A11 — Address input 11 |
| פין 47 | WE-bar — Write Enable (active low) |
| פין 48 | VSS — Ground |
יישומים טיפוסיים
IS61WV102416DBLL-10TLI מתאים עבור 6 יישוםs: Industrial Controller Scratch-Pad Memory, Networking Router / Switch Look-Up Table, Automotive Infotainment / Telematics Buffer, Medical Instrumentation Data Buffer, RAID Controller Cache Memory, Embedded CPU/MCU External Data Store.
Industrial Controller Scratch-Pad Memory
The IS61WV102416DBLL-10TLI provides a 2 MB asynchronous SRAM scratch pad for industrial PLCs, HMI panels, and motion controllers. The 10 ns access time and 1M x 16 organization give 16-bit MCUs and DSPs a deterministic, glue-less external memory that needs no controller overhead. Operating from 2.4-3.6 V it tolerates loosely regulated 24 V->3.3 V rails common in industrial racks, and the industrial -40C to +85C temperature range ensures reliable operation on factory floors.
מומלץ
Networking Router / Switch Look-Up Table
In routers, switches, and firewalls the IS61WV102416DBLL-10TLI is used as a fast parallel look-up table for routing entries, ACL tables, and packet buffers. The 10 ns access time supports line-rate look-ups at typical 100 MHz forwarding clock, and the 16-bit bus aligns with standard network processor datapaths. The wide 2.4-3.6 V supply range simplifies power tree design across router line cards.
מומלץ
Automotive Infotainment / Telematics Buffer
The IS61WV102416DBLL-10TLI serves as a fast external buffer for automotive infotainment head units and telematics control units (non-safety-critical subsystems). The 1M x 16 organization provides ample scratch space for navigation maps, audio DSP delay lines, and CAN/LIN gateway buffers. The wide operating voltage eases integration into 12 V automotive battery rails with linear regulation, and the industrial temperature range covers in-cabin environments.
מומלץ
Medical Instrumentation Data Buffer
In ultrasound carts, patient monitoring stations, and portable diagnostic devices, the IS61WV102416DBLL-10TLI acts as a high-speed FIFO between the analog front end and the host DSP. The 10 ns access time keeps up with high-sample-rate ADCs, while the 16-bit bus matches typical medical imaging pipelines. Low standby current and TTL-compatible I/O simplify battery-powered handheld instrument designs.
מומלץ
RAID Controller Cache Memory
RAID controllers use asynchronous SRAM as a write-back cache to absorb burst writes from the host before draining to disk. The IS61WV102416DBLL-10TLI's 10 ns access time and 1M x 16 organization give 2 MB of low-latency cache that fits typical small-RAID or SSD controller architectures. The 48-pin TSOP-I footprint simplifies board layout next to SATA/SAS controller ASICs.
מומלץ
Embedded CPU/MCU External Data Store
Many 16-bit and 32-bit MCUs ship with only a few hundred KB of internal RAM, insufficient for buffering sensor streams or graphics frame data. The IS61WV102416DBLL-10TLI provides 2 MB of external storage with a simple asynchronous bus interface - no SDRAM controller, no refresh cycles. It pairs directly with the external memory bus of most Cortex-M, RX, and dsPIC devices, freeing the internal SRAM for deterministic real-time tasks.
מומלץ
סיכום מוצרים מומלצים
נתוני עזר הנדסיים עבור IS61WV102416DBLL-10TLI — השוואה, הנחיות תכנון ומידע על תאימות.
מדריך בחירה
השוואה עם חלופות
| פרמטר | מוצר זה | IS61WV102416DBLL-10TLI-TR | IS61WV102416DALL-10TLI | IS61WV102416BLL-10TLI | AS7C31016B-10TIN | CY7C1061AV33-10ZXI |
|---|---|---|---|---|---|---|
| Package | 48-pin TSOP-I | 48-pin TSOP-I | 48-pin TSOP-I | 48-pin TSOP-I | 48-pin TSOP-I | 54-pin TSOP-II |
| Brand | ISSI | ISSI | ISSI | ISSI | Alliance Memory | Infineon (formerly Cypress) |
| Memory Density | 16 Mbit (2 MB) | 16 Mbit | 16 Mbit | 16 Mbit | 16 Mbit | 16 Mbit |
| Organization | 1M x 16 | 1M x 16 | 1M x 16 | 1M x 16 | 1M x 16 | 1M x 16 |
| Access Time | 10 ns | 10 ns | 10 ns | 10 ns | 10 ns | 10 ns |
| Supply Voltage | 2.4 V to 3.6 V (D variant) | 2.4 V to 3.6 V | 2.4 V to 3.6 V | 3.3 V +/- 0.3 V | 3.3 V +/- 0.3 V | 3.3 V +/- 0.3 V |
| Interface | Asynchronous Parallel | Asynchronous Parallel | Asynchronous Parallel | Asynchronous Parallel | Asynchronous Parallel | Asynchronous Parallel |
| Operating Temperature | -40 C to +85 C (Industrial) | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C |
מבדילים עיקריים
- Wide 2.4 V to 3.6 V supply supports loosely regulated rails (לעומתIS61WV102416BLL-10TLI (3.3 V +/- 0.3 V))
- Same 48-pin TSOP-I pinout across ISSI family for PCB reuse (לעומתCY7C1061AV33-10ZXI (54-pin TSOP-II))
- Industrial -40C to +85C temperature range standard (לעומתConsumer-grade 0C to +70C SRAM)
הערות תכנון
Route address and data buses with matched trace lengths and 50 ohm controlled impedance on the 48-pin TSOP-I footprint. Place at least one 0.1 uF ceramic decoupling capacitor close to each VCC pin (pin 23) and a bulk 10 uF tantalum or ceramic capacitor near the package. The wide 16-bit bus is sensitive to skew; avoid running address lines parallel to noisy clock or switching-power traces for more than 25 mm.
Do not leave Chip Enable (CE1-bar) floating. CE1-bar must be driven low during the access cycle; a floating CE can cause the device to enter an undefined state and draw elevated supply current. Similarly, UB-bar and LB-bar must be tied to GND when byte-write control is not used, otherwise I/O bus contention can occur. According to the ISSI datasheet, OE-bar should never be asserted before CE1-bar goes active.
Active supply current scales with read/write frequency. Estimated: at 10 ns cycle (100 MHz equivalent) the IS61WV102416DBLL-10TLI typically draws 90-110 mA active, but in standby (CE1-bar high) it drops below 5 mA. Use chip-enable power-down aggressively in battery-backed designs: gate CE1-bar with the host MCU's chip-select to achieve >90% current reduction during idle periods.
Because asynchronous SRAM relies on address-to-data timing rather than a clock, hold and setup margins must be validated across voltage and temperature. According to the ISSI datasheet, output hold time after OE-bar rising edge is at least 2 ns; designers should sample data on the rising edge of OE-bar (or equivalent strobe) and add 1-2 ns of margin in production test to absorb process variation at the temperature corners.
מידע על תאימות
RoHS compliant per ISSI product page. MSL Level 3 per JEDEC J-STD-020. Not AEC-Q100 qualified; not recommended for automotive safety-critical applications.
