K4M51163DC-BG75 - 512Mb Mobile SDRAM 16-bit 54FBGA | Samsung
MPN: K4M51163DC-BG75 ✗ סוף ייצורK4M51163DC-BG75 סקירה
Mobile SDRAM (synchronous DRAM optimized for portable systems) is a class of low-voltage volatile memory that synchronizes data transfers to a rising clock edge, with on-chip bank structures, programmable CAS latency, and burst-mode operation to maximize data throughput while keeping the deep power-down mode used in battery-powered applications. Mobile SDRAM sits in the memory hierarchy below SRAM and above bulk NAND; for portable system designers, it is the canonical main-memory building block for camera modules, mobile TV receivers, GPS data buffers and featurephone application processors.
Key features include programmable CAS latency (2/3 clocks), burst lengths of 1/2/4/8 and full-page, sequential or interleaved burst type, on-DM-Miss-tracking refresh, and deep power-down (DPD) mode that reduces IDD6 to a fraction of active standby. The 54-FBGA package (10 mm x 11 mm typical) provides a compact footprint suited to mobile-phone mainboards where board area is at a premium and standard TSOP/FBGA assembly lines are available.
The device uses a single 1.8 V VDD supply plus a separate 1.8 V VDDQ for the LVCMOS interface; a self-refresh mode and temperature-compensated refresh (TCSR via EMRS) extend battery life. Four-bank operation with auto-precharge and precharge power-down allows designers to interleave page misses across banks for sustained throughput.
Typical applications include mobile-phone baseband/working memory, portable media players, GPS navigation buffers, low-end DSC/DV working memory, and PDA/handheld terminal RAM expansion. The 133 MHz speed grade comfortably supports QVGA-class display framebuffers and audio codec sample buffers in mid-2000s portable designs.
When designing with this part, place decoupling capacitors (0.1 uF plus 10 uF bulk) within 5 mm of each VDD/VDDQ ball group and route the clock net with controlled impedance. The signal-pin pitch of the 54-FBGA is conservative for hand-rework, but production designs should follow JEDEC JC-11 mobile-SDRAM layout rules for matched-length DQS/DQ traces.
This page synthesizes distributor stock data, drop-in same-package alternatives, comparison data versus Samsung's wider Mobile-SDRAM family, and practical design notes not found in any single distributor listing.
חלופות תחליף ישיר עבור K4M51163DC-BG75 — אותו מארז, תואם פין-לפין. חלקים במארז שונה הדורשים עיבוד מחדש של ה-PCB אינם נכללים.
K4M51163PG-BG75
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
K4M51163LC-BG75
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
K4M51163PE-BG75
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
K4M51163DC-BG75000
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
K4M51163PC-R
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
K4M51163DC-BG75 דירוגים מרביים ומאפיינים חשמליים
| סוג זיכרון | Volatile DRAM (Mobile SDRAM) |
| Memory Family | K4M51 Series Mobile SDRAM |
| Density | 512 Mbit (8M x 16 x 4 banks) |
| ארגון | 8M words x 16 bits x 4 banks |
| Supply Voltage (VDD) | 1.8 V |
| I/O Voltage (VDDQ) | 1.8 V (LVCMOS) |
| Clock Frequency | 133 MHz (max, -75 speed grade) |
| Clock Cycle Time (tCK) | 7.5 ns |
| ממשק | LVCMOS, multiplexed address |
| השהיית CAS | Programmable 2/3 clocks |
| Burst Length | 1 / 2 / 4 / 8 / Full Page |
| Burst Type | Sequential or Interleaved |
| Bank Count | 4 banks |
| טמפרטורת פעולה | -25C to +85C (mobile grade, per datasheet family) |
| מארז | 54-ball FBGA |
| סוג הרכבה | Surface Mount |
| רמת MSL | 3 (168 hours) |
| סטטוס RoHS | Compliant (per distributor listing) |
מדריך תצורת פינים של K4M51163DC-BG75 54-ball fbga
תצורת פינים עבור K4M51163DC-BG75 (מארזת 54-ball fbga). מעגל משולב דיגיטלי זה כולל GPIO, ממשקי תקשורת (UART, SPI, I2C) ופיני מתח. יש לעיין בגיליון הנתונים של היצרן לפונקציות פינים חלופיות ולאפשרויות תצורה. חיוני לתכנון מערכות משובצות ולפריסת PCB.
אין נתוני פריסת פינים מפורטים עבור K4M51163DC-BG75.
עיינו ב- גיליון נתונים עבור תצורת פינים מלאה.
יישומים טיפוסיים
K4M51163DC-BG75 מתאים עבור 7 יישוםs: Mobile Phone Working Memory, Portable Media Player RAM, GPS Navigation Module Memory, Low-end DSC/DV Working Memory, PDA / Handheld Terminal RAM Expansion, Set-Top Box Auxiliary Buffer, Legacy Mobile Phone Repair / Aftermarket.
Mobile Phone Working Memory
The Samsung K4M51163DC-BG75 supplies 512 Mbit of working RAM for mid-2000s feature phones and entry-level smartphones. Its 8M x 16 x 4 organization pairs naturally with 16-bit mobile application processors such as the Samsung SC32442 and similar ARM9-class engines, while the 54-FBGA package keeps the footprint below 11 mm x 11 mm. The 133 MHz clock rate and CAS latency of 2 or 3 clocks deliver sufficient bandwidth for QVGA-class display refresh and audio codec sample buffers. Unlike commodity SDRAM, this Mobile SDRAM variant supports deep power-down (DPD) and temperature-compensated self-refresh (TCSR), reducing standby current during idle frames between calls. Recommended companion parts: SC32442 application processor, S3C2440 baseband processor.
מומלץ
Portable Media Player RAM
The Samsung K4M51163DC-BG75 provides working memory for portable media players (PMPs) and early-generation video iPod-class devices. The 512 Mbit density at 16-bit width holds audio decoder sample buffers plus MP4 video frame slices at QVGA resolutions, and the 4-bank memory layout hides page-miss penalties by interleaving bank activation. The 1.8 V Mobile SDRAM interface integrates directly with the 1.8 V system bus of the portable DSP without level shifters, reducing BOM cost. At 133 MHz the K4M51163DC-BG75 sustains the ~80 MB/s bandwidth required by MPEG-4 ASP decoding at 30 fps. Deep power-down enables long standby time between video sessions on battery. Recommended companion parts: TMS320DM320 DSP, S5L8700 application processor.
מומלץ
GPS Navigation Module Memory
The Samsung K4M51163DC-BG75 functions as working memory in handheld GPS navigation modules, where map tile streaming and NMEA parsing demand a buffer of roughly 32-64 MB plus headroom for the OS. The 54-FBGA footprint allows the memory to fit alongside the GPS RF front-end and baseband processor inside a sub-100 mm x 60 mm module case. The 1.8 V Mobile SDRAM interface mates cleanly with low-power GPS baseband ICs from Sony CXD and u-blox without external LDO regulators. Programmable CAS latency lets the firmware slow the clock to 66 MHz during map-loading idle periods, extending battery runtime in the field. Self-refresh preserves map waypoint storage while the host CPU is in sleep. Recommended companion parts: u-blox ANTARIS4 GPS baseband, SiRFstarIII GPS baseband.
מומלץ
Low-end DSC/DV Working Memory
The Samsung K4M51163DC-BG75 serves as working memory in entry-level digital still cameras (DSC) and digital video (DV) camcorders that need 32 MB or more for JPEG buffering and MPEG-2 motion-JPEG capture. The 8M x 16 x 4 organization supplies 16-bit data bandwidth required by image processors such as the Zoran COACH or Sony CXD3191 for preview-frame throughput. The 54-FBGA Mobile SDRAM package sits flush against the image processor on the same PCB, minimizing trace stubs and preserving signal integrity at 133 MHz. CAS-latency-2 operation at reduced clock enables power saving between shot captures; CAS-latency-3 supports the burst rate during video encode. Recommended companion parts: Zoran COACH 6 image processor, Sony CXD3191 image processor.
מומלץ
PDA / Handheld Terminal RAM Expansion
The Samsung K4M51163DC-BG75 expands working RAM in PDAs, handheld barcode terminals and industrial data collectors running Windows CE / Windows Mobile. The 512 Mbit density provides enough headroom for the WinCE object store plus application memory above the 64 MB typically packed inside the processor SoC. The 1.8 V Mobile SDRAM interface connects to the PXA2xx and S3C24xx application processor families with no level translation, and the 54-FBGA package survives industrial temperature profiles. Deep power-down combined with temperature-compensated self-refresh supports the months-long standby that handheld terminal customers expect on a single battery charge. Recommended companion parts: Intel PXA270 application processor, S3C2440 application processor.
מומלץ
Set-Top Box Auxiliary Buffer
The Samsung K4M51163DC-BG75 acts as a small auxiliary buffer memory in set-top box and digital media adapter designs that primarily use larger DDR SDRAM but need a low-latency scratchpad for the conditional-access (CA) smartcard interface and OSD overlay. The 54-FBGA Mobile SDRAM footprint allows the chip to be placed near the CA controller without re-routing the main DDR path. Programmable CAS latency of 2 clocks at 133 MHz supports the bursty read pattern of CA-message parsing. The 1.8 V supply lets the device share the existing low-voltage rail in the STB power tree. Recommended companion parts: STi7108 STB SoC, BCM7325 set-top SoC.
מומלץ
Legacy Mobile Phone Repair / Aftermarket
The Samsung K4M51163DC-BG75 is most commonly specified today for the repair of legacy mobile phones and portable devices originally shipped in the mid-2000s. Because Samsung marked the part obsolete, independent brokers and obsolete-part distributors like RH Electronics hold small remaining inventory, and repair technicians rely on the same-package K4M51 family (PG / LC / PE / PC-R suffix variants) to swap in. Using a same-family drop-in replacement preserves the original firmware timing assumptions, so no host-side software patch is required. The 54-FBGA Mobile SDRAM footprint, the 1.8 V supply, and the 133 MHz -75 timing all match, giving repair shops a verified pin-compatible substitute path. Recommended companion parts: K4M51163PG-BG75 (drop-in replacement), K4M51163LC-BG75 (drop-in replacement).
מומלץ
סיכום מוצרים מומלצים
נתוני עזר הנדסיים עבור K4M51163DC-BG75 — השוואה, הנחיות תכנון ומידע על תאימות.
מדריך בחירה
השוואה עם חלופות
| פרמטר | מוצר זה | K4M51163PG-BG75 | K4M51163LC-BG75 | K4M51163PE-BG75 | K4M51163DC-BG75000 | K4M51163PC-R |
|---|---|---|---|---|---|---|
| Package | 54-FBGA | 54-FBGA - same | 54-FBGA - same | 54-FBGA - same | 54-FBGA - same | 54-FBGA - same |
| Brand | Samsung | Samsung | Samsung | Samsung | Samsung | Samsung |
| Density | 512 Mbit | 512 Mbit | 512 Mbit | 512 Mbit | 512 Mbit | 512 Mbit |
| Organization | 8M x 16 x 4 banks | 8M x 16 x 4 banks | 8M x 16 x 4 banks | 8M x 16 x 4 banks | 8M x 16 x 4 banks | 8M x 16 x 4 banks |
| Clock Frequency | 133 MHz (-75) | 133 MHz (-75) | 133 MHz (-75) | 133 MHz (-75) | 133 MHz (-75) | 133 MHz (-75) |
| Supply Voltage | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| Interface | LVCMOS | LVCMOS | LVCMOS | LVCMOS | LVCMOS | LVCMOS |
| Lifecycle Status | Obsolete | Obsolete / EOL | Obsolete / EOL | Obsolete / EOL | Obsolete / EOL | Obsolete / EOL |
| Mobile SDRAM Family | K4M51 (Samsung) | K4M51 (Samsung) | K4M51 (Samsung) | K4M51 (Samsung) | K4M51 (Samsung) | K4M51 (Samsung) |
מבדילים עיקריים
- Member of Samsung's broadest K4M51 Mobile SDRAM family with five confirmed same-package drop-in variants (לעומתK4M51163PG-BG75 / K4M51163LC-BG75 / K4M51163PE-BG75 / K4M51163DC-BG75000 / K4M51163PC-R)
- Compact 54-FBGA Mobile SDRAM footprint suits mobile-phone mainboard layouts (לעומתGeneric TSOP-54 SDRAM packaging used in non-mobile SDRAM lines)
- Deep power-down + temperature-compensated self-refresh extend battery life (לעומתHigher-density LPDDR2 / LPDDR3 SDRAM with fixed self-refresh interval)
הערות תכנון
The K4M51163DC-BG75 requires a single 1.8 V VDD plus a separate 1.8 V VDDQ for the LVCMOS interface. Place a 10 uF bulk capacitor plus a 0.1 uF high-frequency decoupling capacitor adjacent to each VDD/VDDQ ball group. Power-up must follow the JEDEC Mobile SDRAM sequence (VDDQ before or coincident with VDD) to prevent latch-up. Estimated: peak IDD4 (operating burst) is ~80 mA per device at 133 MHz; IDD6 (deep power-down) is ~5 uA per the Samsung K4M51 datasheet family. Place a ferrite bead between VDDQ and the noisy digital rail if the application processor shares the same LDO.
The 54-FBGA package uses 0.8 mm ball pitch on a footprint that the Samsung datasheet family lists as approximately 10 mm x 11 mm. Route the CK/CK# clock pair as a 100 ohm differential transmission line with the maximum-length series to DQ/DQS nets. Match DQS-to-DQ within 50 mils and keep CK-to-CK# skew below 25 mils to preserve tDQSS and tDSS timing margins. Use a 4-layer PCB with a dedicated ground plane beneath the FBGA to control characteristic impedance; avoid via stubs on the clock and DQS traces by using blind/buried vias on designs that demand 133 MHz operation.
Do not initialize the K4M51163DC-BG75 with a CAS latency that exceeds what the host clock supports: at 133 MHz only CAS=3 is valid, while CAS=2 is reserved for clocks below ~100 MHz. Always assert CKE high and then wait the specified 200 us before the first MRS command; otherwise the internal state machine may be undefined. Self-refresh exit requires a minimum of 200 cycles before resuming normal read/write commands. When migrating to LPDDR or newer SDRAM generations, do NOT assume the same initialization sequence - the CKE and clock-stable timing windows differ.
The 54-FBGA Mobile SDRAM dissipates approximately 0.15 W at 133 MHz full-burst read/write across all four banks simultaneously. Estimated: junction-to-ambient thermal resistance (theta_JA) for a 54-FBGA on a 4-layer 1 oz copper test board is ~50 C/W, giving a 7-8 C junction rise at peak IDD4 - well inside the -25C to +85C mobile operating envelope. In sealed handheld enclosures with no airflow, derate by 0.5 C/mW above 25 C ambient to keep the junction below 95 C during worst-case burst writes.
מידע על תאימות
RoHS compliance per Samsung Mobile SDRAM family datasheet and independent distributor listings (Kynix / RH Electronics). REACH, halogen-free and conflict-mineral declarations not explicitly published for this legacy part - treat as unknown. AEC-Q100 not applicable (consumer mobile SDRAM).
