K4M51163DC-BG75 - 512Mb Mobile SDRAM 16-bit 54FBGA | Samsung
부품 번호: K4M51163DC-BG75 ✗ 단종| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $4.2 | $4.20 |
| 10 | $3.85 | $38.50 |
| 100 | $3.4 | $340.00 |
| 500 | $2.95 | $1,475.00 |
| 1,000 | $2.55 | $2,550.00 |
K4M51163DC-BG75 개요
Mobile SDRAM (synchronous DRAM optimized for portable systems) is a class of low-voltage volatile memory that synchronizes data transfers to a rising clock edge, with on-chip bank structures, programmable CAS latency, and burst-mode operation to maximize data throughput while keeping the deep power-down mode used in battery-powered applications. Mobile SDRAM sits in the memory hierarchy below SRAM and above bulk NAND; for portable system designers, it is the canonical main-memory building block for camera modules, mobile TV receivers, GPS data buffers and featurephone application processors.
Key features include programmable CAS latency (2/3 clocks), burst lengths of 1/2/4/8 and full-page, sequential or interleaved burst type, on-DM-Miss-tracking refresh, and deep power-down (DPD) mode that reduces IDD6 to a fraction of active standby. The 54-FBGA package (10 mm x 11 mm typical) provides a compact footprint suited to mobile-phone mainboards where board area is at a premium and standard TSOP/FBGA assembly lines are available.
The device uses a single 1.8 V VDD supply plus a separate 1.8 V VDDQ for the LVCMOS interface; a self-refresh mode and temperature-compensated refresh (TCSR via EMRS) extend battery life. Four-bank operation with auto-precharge and precharge power-down allows designers to interleave page misses across banks for sustained throughput.
Typical applications include mobile-phone baseband/working memory, portable media players, GPS navigation buffers, low-end DSC/DV working memory, and PDA/handheld terminal RAM expansion. The 133 MHz speed grade comfortably supports QVGA-class display framebuffers and audio codec sample buffers in mid-2000s portable designs.
When designing with this part, place decoupling capacitors (0.1 uF plus 10 uF bulk) within 5 mm of each VDD/VDDQ ball group and route the clock net with controlled impedance. The signal-pin pitch of the 54-FBGA is conservative for hand-rework, but production designs should follow JEDEC JC-11 mobile-SDRAM layout rules for matched-length DQS/DQ traces.
This page synthesizes distributor stock data, drop-in same-package alternatives, comparison data versus Samsung's wider Mobile-SDRAM family, and practical design notes not found in any single distributor listing.
드롭인 대체품: K4M51163DC-BG75 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K4M51163PG-BG75
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
K4M51163LC-BG75
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
K4M51163PE-BG75
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
K4M51163DC-BG75000
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
K4M51163PC-R
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
K4M51163DC-BG75 최대 정격 & 전기적 특성
| 메모리 유형 | Volatile DRAM (Mobile SDRAM) |
| Memory Family | K4M51 Series Mobile SDRAM |
| Density | 512 Mbit (8M x 16 x 4 banks) |
| 메모리 구성 | 8M words x 16 bits x 4 banks |
| Supply Voltage (VDD) | 1.8 V |
| I/O Voltage (VDDQ) | 1.8 V (LVCMOS) |
| Clock Frequency | 133 MHz (max, -75 speed grade) |
| Clock Cycle Time (tCK) | 7.5 ns |
| 인터페이스 | LVCMOS, multiplexed address |
| CAS 레이턴시 | Programmable 2/3 clocks |
| Burst Length | 1 / 2 / 4 / 8 / Full Page |
| Burst Type | Sequential or Interleaved |
| Bank Count | 4 banks |
| 동작 온도 | -25C to +85C (mobile grade, per datasheet family) |
| 패키지 | 54-ball FBGA |
| 실장 유형 | Surface Mount |
| MSL 레벨 | 3 (168 hours) |
| RoHS 상태 | Compliant (per distributor listing) |
K4M51163DC-BG75 54-ball fbga 핀 구성 가이드
K4M51163DC-BG75(54-ball fbga 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: K4M51163DC-BG75.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
K4M51163DC-BG75 적합 용도: 7 애플리케이션s: Mobile Phone Working Memory, Portable Media Player RAM, GPS Navigation Module Memory, Low-end DSC/DV Working Memory, PDA / Handheld Terminal RAM Expansion, Set-Top Box Auxiliary Buffer, Legacy Mobile Phone Repair / Aftermarket.
Mobile Phone Working Memory
The Samsung K4M51163DC-BG75 supplies 512 Mbit of working RAM for mid-2000s feature phones and entry-level smartphones. Its 8M x 16 x 4 organization pairs naturally with 16-bit mobile application processors such as the Samsung SC32442 and similar ARM9-class engines, while the 54-FBGA package keeps the footprint below 11 mm x 11 mm. The 133 MHz clock rate and CAS latency of 2 or 3 clocks deliver sufficient bandwidth for QVGA-class display refresh and audio codec sample buffers. Unlike commodity SDRAM, this Mobile SDRAM variant supports deep power-down (DPD) and temperature-compensated self-refresh (TCSR), reducing standby current during idle frames between calls. Recommended companion parts: SC32442 application processor, S3C2440 baseband processor.
추천
Portable Media Player RAM
The Samsung K4M51163DC-BG75 provides working memory for portable media players (PMPs) and early-generation video iPod-class devices. The 512 Mbit density at 16-bit width holds audio decoder sample buffers plus MP4 video frame slices at QVGA resolutions, and the 4-bank memory layout hides page-miss penalties by interleaving bank activation. The 1.8 V Mobile SDRAM interface integrates directly with the 1.8 V system bus of the portable DSP without level shifters, reducing BOM cost. At 133 MHz the K4M51163DC-BG75 sustains the ~80 MB/s bandwidth required by MPEG-4 ASP decoding at 30 fps. Deep power-down enables long standby time between video sessions on battery. Recommended companion parts: TMS320DM320 DSP, S5L8700 application processor.
추천
GPS Navigation Module Memory
The Samsung K4M51163DC-BG75 functions as working memory in handheld GPS navigation modules, where map tile streaming and NMEA parsing demand a buffer of roughly 32-64 MB plus headroom for the OS. The 54-FBGA footprint allows the memory to fit alongside the GPS RF front-end and baseband processor inside a sub-100 mm x 60 mm module case. The 1.8 V Mobile SDRAM interface mates cleanly with low-power GPS baseband ICs from Sony CXD and u-blox without external LDO regulators. Programmable CAS latency lets the firmware slow the clock to 66 MHz during map-loading idle periods, extending battery runtime in the field. Self-refresh preserves map waypoint storage while the host CPU is in sleep. Recommended companion parts: u-blox ANTARIS4 GPS baseband, SiRFstarIII GPS baseband.
추천
Low-end DSC/DV Working Memory
The Samsung K4M51163DC-BG75 serves as working memory in entry-level digital still cameras (DSC) and digital video (DV) camcorders that need 32 MB or more for JPEG buffering and MPEG-2 motion-JPEG capture. The 8M x 16 x 4 organization supplies 16-bit data bandwidth required by image processors such as the Zoran COACH or Sony CXD3191 for preview-frame throughput. The 54-FBGA Mobile SDRAM package sits flush against the image processor on the same PCB, minimizing trace stubs and preserving signal integrity at 133 MHz. CAS-latency-2 operation at reduced clock enables power saving between shot captures; CAS-latency-3 supports the burst rate during video encode. Recommended companion parts: Zoran COACH 6 image processor, Sony CXD3191 image processor.
추천
PDA / Handheld Terminal RAM Expansion
The Samsung K4M51163DC-BG75 expands working RAM in PDAs, handheld barcode terminals and industrial data collectors running Windows CE / Windows Mobile. The 512 Mbit density provides enough headroom for the WinCE object store plus application memory above the 64 MB typically packed inside the processor SoC. The 1.8 V Mobile SDRAM interface connects to the PXA2xx and S3C24xx application processor families with no level translation, and the 54-FBGA package survives industrial temperature profiles. Deep power-down combined with temperature-compensated self-refresh supports the months-long standby that handheld terminal customers expect on a single battery charge. Recommended companion parts: Intel PXA270 application processor, S3C2440 application processor.
추천
Set-Top Box Auxiliary Buffer
The Samsung K4M51163DC-BG75 acts as a small auxiliary buffer memory in set-top box and digital media adapter designs that primarily use larger DDR SDRAM but need a low-latency scratchpad for the conditional-access (CA) smartcard interface and OSD overlay. The 54-FBGA Mobile SDRAM footprint allows the chip to be placed near the CA controller without re-routing the main DDR path. Programmable CAS latency of 2 clocks at 133 MHz supports the bursty read pattern of CA-message parsing. The 1.8 V supply lets the device share the existing low-voltage rail in the STB power tree. Recommended companion parts: STi7108 STB SoC, BCM7325 set-top SoC.
추천
Legacy Mobile Phone Repair / Aftermarket
The Samsung K4M51163DC-BG75 is most commonly specified today for the repair of legacy mobile phones and portable devices originally shipped in the mid-2000s. Because Samsung marked the part obsolete, independent brokers and obsolete-part distributors like RH Electronics hold small remaining inventory, and repair technicians rely on the same-package K4M51 family (PG / LC / PE / PC-R suffix variants) to swap in. Using a same-family drop-in replacement preserves the original firmware timing assumptions, so no host-side software patch is required. The 54-FBGA Mobile SDRAM footprint, the 1.8 V supply, and the 133 MHz -75 timing all match, giving repair shops a verified pin-compatible substitute path. Recommended companion parts: K4M51163PG-BG75 (drop-in replacement), K4M51163LC-BG75 (drop-in replacement).
추천
추천 제품 요약
엔지니어링 참조 데이터: K4M51163DC-BG75 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K4M51163PG-BG75 | K4M51163LC-BG75 | K4M51163PE-BG75 | K4M51163DC-BG75000 | K4M51163PC-R |
|---|---|---|---|---|---|---|
| Package | 54-FBGA | 54-FBGA - same | 54-FBGA - same | 54-FBGA - same | 54-FBGA - same | 54-FBGA - same |
| Brand | Samsung | Samsung | Samsung | Samsung | Samsung | Samsung |
| Density | 512 Mbit | 512 Mbit | 512 Mbit | 512 Mbit | 512 Mbit | 512 Mbit |
| Organization | 8M x 16 x 4 banks | 8M x 16 x 4 banks | 8M x 16 x 4 banks | 8M x 16 x 4 banks | 8M x 16 x 4 banks | 8M x 16 x 4 banks |
| Clock Frequency | 133 MHz (-75) | 133 MHz (-75) | 133 MHz (-75) | 133 MHz (-75) | 133 MHz (-75) | 133 MHz (-75) |
| Supply Voltage | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| Interface | LVCMOS | LVCMOS | LVCMOS | LVCMOS | LVCMOS | LVCMOS |
| Lifecycle Status | Obsolete | Obsolete / EOL | Obsolete / EOL | Obsolete / EOL | Obsolete / EOL | Obsolete / EOL |
| Mobile SDRAM Family | K4M51 (Samsung) | K4M51 (Samsung) | K4M51 (Samsung) | K4M51 (Samsung) | K4M51 (Samsung) | K4M51 (Samsung) |
주요 차별점
- Member of Samsung's broadest K4M51 Mobile SDRAM family with five confirmed same-package drop-in variants (vs K4M51163PG-BG75 / K4M51163LC-BG75 / K4M51163PE-BG75 / K4M51163DC-BG75000 / K4M51163PC-R)
- Compact 54-FBGA Mobile SDRAM footprint suits mobile-phone mainboard layouts (vs Generic TSOP-54 SDRAM packaging used in non-mobile SDRAM lines)
- Deep power-down + temperature-compensated self-refresh extend battery life (vs Higher-density LPDDR2 / LPDDR3 SDRAM with fixed self-refresh interval)
설계 노트
The K4M51163DC-BG75 requires a single 1.8 V VDD plus a separate 1.8 V VDDQ for the LVCMOS interface. Place a 10 uF bulk capacitor plus a 0.1 uF high-frequency decoupling capacitor adjacent to each VDD/VDDQ ball group. Power-up must follow the JEDEC Mobile SDRAM sequence (VDDQ before or coincident with VDD) to prevent latch-up. Estimated: peak IDD4 (operating burst) is ~80 mA per device at 133 MHz; IDD6 (deep power-down) is ~5 uA per the Samsung K4M51 datasheet family. Place a ferrite bead between VDDQ and the noisy digital rail if the application processor shares the same LDO.
The 54-FBGA package uses 0.8 mm ball pitch on a footprint that the Samsung datasheet family lists as approximately 10 mm x 11 mm. Route the CK/CK# clock pair as a 100 ohm differential transmission line with the maximum-length series to DQ/DQS nets. Match DQS-to-DQ within 50 mils and keep CK-to-CK# skew below 25 mils to preserve tDQSS and tDSS timing margins. Use a 4-layer PCB with a dedicated ground plane beneath the FBGA to control characteristic impedance; avoid via stubs on the clock and DQS traces by using blind/buried vias on designs that demand 133 MHz operation.
Do not initialize the K4M51163DC-BG75 with a CAS latency that exceeds what the host clock supports: at 133 MHz only CAS=3 is valid, while CAS=2 is reserved for clocks below ~100 MHz. Always assert CKE high and then wait the specified 200 us before the first MRS command; otherwise the internal state machine may be undefined. Self-refresh exit requires a minimum of 200 cycles before resuming normal read/write commands. When migrating to LPDDR or newer SDRAM generations, do NOT assume the same initialization sequence - the CKE and clock-stable timing windows differ.
The 54-FBGA Mobile SDRAM dissipates approximately 0.15 W at 133 MHz full-burst read/write across all four banks simultaneously. Estimated: junction-to-ambient thermal resistance (theta_JA) for a 54-FBGA on a 4-layer 1 oz copper test board is ~50 C/W, giving a 7-8 C junction rise at peak IDD4 - well inside the -25C to +85C mobile operating envelope. In sealed handheld enclosures with no airflow, derate by 0.5 C/mW above 25 C ambient to keep the junction below 95 C during worst-case burst writes.
규정 준수 정보
RoHS compliance per Samsung Mobile SDRAM family datasheet and independent distributor listings (Kynix / RH Electronics). REACH, halogen-free and conflict-mineral declarations not explicitly published for this legacy part - treat as unknown. AEC-Q100 not applicable (consumer mobile SDRAM).
