BSC050N04LSGATMA1 vs BSC026N04LSATMA1 तुलना
विस्तृत दोनों ओर की तुलना BSC050N04LSGATMA1 द्वारा Infineon और BSC026N04LSATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | BSC050N04LSGATMA1 | BSC026N04LSATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current at 25C (ID, Ta) | 18 A | — |
| Continuous Drain Current at 25C (ID, Tc) | 85 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 57 W | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: VGS(th) value] |
| Technology | OptiMOS 3 (trench MOSFET) | Trench-gate OptiMOS™ 5 |
| पैकेज | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) | PG-TDSON-8-6 (TDSON 5x6 mm) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| ऑपरेटिंग तापमान रेंज | -55C to +150C | -55°C to +150°C |
| Avalanche Energy Rated | Yes (single-pulse avalanche) | — |
| RoHS स्थिति | Compliant | Compliant |
| MSL स्तर | 1 | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS™ 5 N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID, Ta) | — | 23 A |
| Continuous Drain Current (ID, Tc=25°C) | — | 100 A |
| Pulsed Drain Current (IDM, Tc=25°C) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 2.6 mΩ |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: max RDS(on)] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 63 W |
| Channel Type | — | N-Channel |