BSC059N04LS6ATMA1 vs BSC150N03LDGATMA1 तुलना
विस्तृत दोनों ओर की तुलना BSC059N04LS6ATMA1 द्वारा Infineon और BSC150N03LDGATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
BSC150N03LDGATMA1 - 30V 20A Dual N-Ch OptiMOS 3 MOSFET | Infineon
BSC150N03LDGATMA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | BSC059N04LS6ATMA1 | BSC150N03LDGATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Technology | OptiMOS 6 (N-channel MOSFET) | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TA=25C | 17 A | — |
| Continuous Drain Current (ID) at TC=25C | 49 A | — |
| Pulsed Drain Current (ID,pulse) at TC=25C | 59 A | — |
| On-Resistance RDS(on) max | 5.9 mOhm at VGS=10 V | — |
| Total Power Dissipation at TA=25C | 3 W | — |
| Total Power Dissipation at TC=25C | 38 W | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| ऑपरेटिंग तापमान रेंज | -55C to +150C | — |
| पैकेज | PG-TDSON-8-6 (SuperSO8 5x6 mm) | PG-TDSON-8-4 (5x6 mm) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Diode Continuous Forward Current (IS) | 38 A at TC=25C | — |
| Diode Pulse Current (IS,pulse) | 236 A at TC=25C | — |
| RoHS स्थिति | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel MOSFET Array (half-bridge) |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Id) @ TA=25C | — | 20 A |
| Continuous Drain Current (Id) @ TA=70C | — | [DATA_NEEDED: Id at TA=70C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: Idm] |
| Gate-Source Voltage (Vgs) | — | ±20 V |
| Gate Threshold Voltage (Vgs(th)) | — | 1.0 V to 2.5 V |
| On-State Resistance (Rds(on)) @ Vgs=10V | — | [DATA_NEEDED: typical Rds(on) mOhm] |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | — | [DATA_NEEDED: typical Rds(on) mOhm] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg nC] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: typical Qgd nC] |
| Output Charge (Qoss) | — | [DATA_NEEDED: typical Qoss nC] |
| Power Dissipation (Pd) | — | 26 W |
| ऑपरेटिंग जंक्शन तापमान | — | -55C to +150C |
| MSL स्तर | — | 1 |
| हैलोजन फ्री | — | Yes |