BSC059N04LSGATMA1 vs BSC120N03LSGATMA1 तुलना
विस्तृत दोनों ओर की तुलना BSC059N04LSGATMA1 द्वारा Infineon और BSC120N03LSGATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
BSC120N03LSGATMA1 - 30V 39A OptiMOS 3 N-Channel MOSFET | Infineon
BSC120N03LSGATMA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | BSC059N04LSGATMA1 | BSC120N03LSGATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Technology | OptiMOS 3 (N-channel trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current (ID, Tc=25C) | 73 A | — |
| Continuous Drain Current (ID, Ta=25C) | 16 A | — |
| On-State Resistance RDS(on) max @ VGS=10V | 5.9 mOhm | — |
| Power Dissipation (Tc=25C) | 50 W | — |
| Power Dissipation (Ta=25C) | 2.5 W | — |
| Gate-Source Threshold Voltage VGS(th) | 1.2 V to 2.0 V (typ) | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total, typical nC] | — |
| ऑपरेटिंग तापमान रेंज | -55 C to +150 C | -55C to +150C (TJ) |
| पैकेज | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| MSL स्तर | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS स्थिति | Compliant | Compliant |
| REACH Status | Compliant | — |
| Channel Type | N-Channel | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 12 A |
| Continuous Drain Current (ID) at Tc=25C | — | 39 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) at VGS=10V | — | 12 mOhm (typical) |
| On-State Resistance RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 28 W |