BSC059N04LSGATMA1 vs BSC120N03LSGATMA1 Comparison
Detailed side-by-side comparison of BSC059N04LSGATMA1 by Infineon and BSC120N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC120N03LSGATMA1
BSC120N03LSGATMA1 - 30V 39A OptiMOS 3 N-Channel MOSFET | Infineon
BSC120N03LSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC059N04LSGATMA1 | BSC120N03LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.39 | $0.36 |
| Technology | OptiMOS 3 (N-channel trench MOSFET) | β |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current (ID, Tc=25C) | 73 A | β |
| Continuous Drain Current (ID, Ta=25C) | 16 A | β |
| On-State Resistance RDS(on) max @ VGS=10V | 5.9 mOhm | β |
| Power Dissipation (Tc=25C) | 50 W | β |
| Power Dissipation (Ta=25C) | 2.5 W | β |
| Gate-Source Threshold Voltage VGS(th) | 1.2 V to 2.0 V (typ) | β |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total, typical nC] | β |
| Operating Temperature Range | -55 C to +150 C | -55C to +150C (TJ) |
| Package | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| REACH Status | Compliant | β |
| Channel Type | N-Channel | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 3 |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | β | 12 A |
| Continuous Drain Current (ID) at Tc=25C | β | 39 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) at VGS=10V | β | 12 mOhm (typical) |
| On-State Resistance RDS(on) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 28 W |