BSC059N04LSGATMA1 vs BSC120N03LSGATMA1 Comparison

Detailed side-by-side comparison of BSC059N04LSGATMA1 by Infineon and BSC120N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC059N04LSGATMA1 BSC120N03LSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Technology OptiMOS 3 (N-channel trench MOSFET) —
Drain-Source Voltage (VDS) 40 V 30 V
Continuous Drain Current (ID, Tc=25C) 73 A —
Continuous Drain Current (ID, Ta=25C) 16 A —
On-State Resistance RDS(on) max @ VGS=10V 5.9 mOhm —
Power Dissipation (Tc=25C) 50 W —
Power Dissipation (Ta=25C) 2.5 W —
Gate-Source Threshold Voltage VGS(th) 1.2 V to 2.0 V (typ) —
Total Gate Charge Qg [DATA_NEEDED: Qg total, typical nC] —
Operating Temperature Range -55 C to +150 C -55C to +150C (TJ)
Package PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TDSON-8-5 (SuperSO-8, 5x6 mm)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
REACH Status Compliant —
Channel Type N-Channel —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 3
FET Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 12 A
Continuous Drain Current (ID) at Tc=25C — 39 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — +/-20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
On-State Resistance RDS(on) at VGS=10V — 12 mOhm (typical)
On-State Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 28 W

Datasheets & Resources

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