BSC059N04LSGATMA1 vs BSC120N03LSGATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BSC059N04LSGATMA1 tarafından Infineon ve BSC120N03LSGATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
BSC120N03LSGATMA1 - 30V 39A OptiMOS 3 N-Channel MOSFET | Infineon
BSC120N03LSGATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | BSC059N04LSGATMA1 | BSC120N03LSGATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Technology | OptiMOS 3 (N-channel trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current (ID, Tc=25C) | 73 A | — |
| Continuous Drain Current (ID, Ta=25C) | 16 A | — |
| On-State Resistance RDS(on) max @ VGS=10V | 5.9 mOhm | — |
| Power Dissipation (Tc=25C) | 50 W | — |
| Power Dissipation (Ta=25C) | 2.5 W | — |
| Gate-Source Threshold Voltage VGS(th) | 1.2 V to 2.0 V (typ) | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total, typical nC] | — |
| İşletim Sıcaklığı Aralığı | -55 C to +150 C | -55C to +150C (TJ) |
| Paket | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) |
| Montaj Türü | Surface Mount | Surface Mount |
| MSL Seviyesi | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS Durumu | Compliant | Compliant |
| REACH Status | Compliant | — |
| Channel Type | N-Channel | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 12 A |
| Continuous Drain Current (ID) at Tc=25C | — | 39 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) at VGS=10V | — | 12 mOhm (typical) |
| On-State Resistance RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 28 W |