BSZ0501NSIATMA1 vs BSC019N08NS5ATMA1 तुलना
विस्तृत दोनों ओर की तुलना BSZ0501NSIATMA1 द्वारा Infineon और BSC019N08NS5ATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
BSC019N08NS5ATMA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | BSZ0501NSIATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ0501NSIATMA1 | — |
| Product Family | OptiMOS 5 (25V/30V) | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Id) at TA=25C | 25 A | — |
| Continuous Drain Current (Id) at TC=25C | 40 A | — |
| Power Dissipation (Pd) at TA=25C | 2.1 W | — |
| Power Dissipation (Pd) at TC=25C | 50 W | — |
| Operating Mode | Enhancement Mode | — |
| Configuration | Single with built-in diode | — |
| पैकेज | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Number of Terminals | 8 | — |
| JESD-609 Code | e3 (matte tin) | — |
| MSL स्तर | [DATA_NEEDED: MSL rating] | 1 |
| Rds(on) at Vgs=10V (typ) | [DATA_NEEDED: Rds(on) value] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| ऑपरेटिंग तापमान रेंज | [DATA_NEEDED: Tj max] | -55 C to +150 C |
| RoHS स्थिति | Compliant | Compliant |
| Technology | — | OptiMOS 5 (N-channel trench) |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at TA=25C | — | 28 A |
| Continuous Drain Current (ID) at TC=25C | — | 237 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max at VGS=10V | — | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 3.0 V |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (TA=25C) | — | 3 W |
| Power Dissipation (TC=25C) | — | 214 W |
| Avalanche Rated | — | Yes |