BSZ0501NSIATMA1 vs BSC019N08NS5ATMA1 Comparison
Detailed side-by-side comparison of BSZ0501NSIATMA1 by Infineon and BSC019N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ0501NSIATMA1
BSZ0501NSIATMA1 - 30V 40A OptiMOS 5 N-Channel MOSFET | Infineon
BSZ0501NSIATMA1 β ActiveInfineon
BSC019N08NS5ATMA1
BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
BSC019N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSZ0501NSIATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.29 | $1.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ0501NSIATMA1 | β |
| Product Family | OptiMOS 5 (25V/30V) | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (Vds) | 30 V | β |
| Continuous Drain Current (Id) at TA=25C | 25 A | β |
| Continuous Drain Current (Id) at TC=25C | 40 A | β |
| Power Dissipation (Pd) at TA=25C | 2.1 W | β |
| Power Dissipation (Pd) at TC=25C | 50 W | β |
| Operating Mode | Enhancement Mode | β |
| Configuration | Single with built-in diode | β |
| Package | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Terminals | 8 | β |
| JESD-609 Code | e3 (matte tin) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| Rds(on) at Vgs=10V (typ) | [DATA_NEEDED: Rds(on) value] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | β |
| Operating Temperature Range | [DATA_NEEDED: Tj max] | -55 C to +150 C |
| RoHS Status | Compliant | Compliant |
| Technology | β | OptiMOS 5 (N-channel trench) |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) max | β | 80 V |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID) at TA=25C | β | 28 A |
| Continuous Drain Current (ID) at TC=25C | β | 237 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max at VGS=10V | β | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | 3.0 V |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (TA=25C) | β | 3 W |
| Power Dissipation (TC=25C) | β | 214 W |
| Avalanche Rated | β | Yes |