EP1K30TI144-2 vs EP1K30TI144-2NGA तुलना
विस्तृत दोनों ओर की तुलना EP1K30TI144-2 द्वारा Intel और EP1K30TI144-2NGA द्वारा Altera. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | EP1K30TI144-2 | EP1K30TI144-2NGA |
|---|---|---|
| ब्रांड | Intel | Altera |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | Obsolete | Obsolete |
| Family | ACEX-1K | — |
| Series | EP1K30 | ACEX 1K |
| Logic Elements / Cells | 1728 | 1728 |
| Total RAM Bits | 24576 | 24576 |
| Number of Logic Array Blocks (LABs) | 216 | 216 |
| Equivalent Gates | 30,000 | — |
| User I/O Count | 102 | — |
| Number of I/O Banks | 4 | — |
| Supply Voltage - Core | 2.5 V (2.375 V min, 2.625 V max) | — |
| Supply Voltage - I/O | 2.5 V / 3.3 V / 5.0 V (multiVolt) | — |
| Maximum Internal Frequency | 200 MHz | — |
| Process Technology | 0.22 µm CMOS, SRAM-based | 0.18 um SRAM CMOS |
| Embedded Memory Type | Dual-port EAB (Embedded Array Block) | — |
| पैकेज | 144-LQFP (TQFP), 22 mm × 22 mm, 0.5 mm pitch | — |
| ऑपरेटिंग तापमान | -40 °C to +85 °C (Industrial, "I" suffix) | -40C to +85C (Industrial) |
| Speed Grade | -2 (mid-tier) | -2 (faster than -3) |
| Configuration Method | SRAM, requires external configuration PROM (EPC) | — |
| Programming Interface | JTAG (IEEE 1149.1) / IEEE 1532 ISP | — |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| RoHS स्थिति | [DATA_NEEDED: RoHS compliance - legacy part] | — |
| Number of I/O | — | 102 |
| Number of Gates (typical) | — | 119000 |
| Core Voltage (VCCINT) | — | 2.5 V |
| I/O Supply Voltage (VCCIO) | — | 3.3 V |
| पैकेज / केस | — | 144-LFQFP / 144-TQFP (20x20 mm) |
| Programmable Logic Type | — | In-system programmable SRAM FPGA |
| Lead Free / RoHS Status | — | Lead free / RoHS compliant per suffix code |
| Design Software | — | Quartus II, MAX+PLUS II |
| JTAG Support | — | Yes (IEEE 1149.1 boundary scan) |
| Configuration | — | SRAM-based, requires configuration device at power-up |