IPB021N10NM5LF2ATMA1 vs IPB024N10N5ATMA1 तुलना
विस्तृत दोनों ओर की तुलना IPB021N10NM5LF2ATMA1 द्वारा Infineon और IPB024N10N5ATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 ✓ सक्रियInfineon
IPB024N10N5ATMA1 - 100V 2.4mΩ OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | IPB021N10NM5LF2ATMA1 | IPB024N10N5ATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 5 Linear FET 2 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D) at T_C=25°C | 176 A | — |
| Continuous Drain Current (I_D) at T_A=25°C | 30 A | — |
| R_DS(on) Maximum | 2.1 mΩ | — |
| Gate-Source Voltage (V_GS) Maximum | ±20 V [DATA_NEEDED: absolute max rated V_GS] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min] | — |
| Power Dissipation (P_D) at T_C=25°C | 375 W | — |
| Power Dissipation (P_D) at T_A=25°C | 3.8 W | — |
| ऑपरेटिंग तापमान रेंज | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] | -55C to +175C (junction) |
| पैकेज | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) | PG-TO263-7 (D2PAK-7) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | 10 V, 15 V | — |
| Technology | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) |
| RoHS स्थिति | Compliant | Compliant |
| MSL स्तर | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] | 1 (unlimited floor life at <30C/85% RH) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, TC=25C) | — | 180 A |
| Power Dissipation (PD, TC=25C) | — | 250 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 2.4 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge Qg typ @ VGS=10V | — | [DATA_NEEDED: Qg total gate charge] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total gate charge] |
| Input Capacitance Ciss | — | [DATA_NEEDED: Ciss value] |
| Output Capacitance Coss | — | [DATA_NEEDED: Coss value] |
| Reverse Recovery Charge Qrr | — | [DATA_NEEDED: Qrr value] |
| Packaging | — | Tape & Reel (13-inch reel) |
| हैलोजन फ्री | — | Yes (per Infineon product family policy) |