MRF8HP21080HR5 vs MRF8HP21130HR5 तुलना
विस्तृत दोनों ओर की तुलना MRF8HP21080HR5 द्वारा NXP Semiconductors और MRF8HP21130HR5 द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
NXP Semiconductors
MRF8HP21130HR5 - 130W LDMOS RF Power Transistor | NXP | LTE/W-CDMA
MRF8HP21130HR5 Obsoleteविशेषता तुलना
| पैरामीटर | MRF8HP21080HR5 | MRF8HP21130HR5 |
|---|---|---|
| ब्रांड | NXP Semiconductors | NXP Semiconductors |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | Obsolete | Obsolete |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| ट्रांज़िस्टर प्रकार | LDMOS, N-Channel, Dual (2 elements) | LDMOS, N-Channel, Dual |
| Configuration | Common Source, 2 Elements | Common Source, 2 Elements |
| Frequency | 2.17 GHz (2110–2170 MHz cellular band) | — |
| Test Voltage | 28 V | — |
| Test Current | 150 mA | — |
| Power Gain | 14.4 dB at 2.17 GHz | 14 dB |
| Output Power (Avg.) | 16 W (W-CDMA/LTE) | — |
| Drain-Source Voltage Rating | 65 V | — |
| पैकेज / केस | NI-780-4 (Case 465M) | NI-780-4 (ceramic flange) |
| माउंटिंग प्रकार | Flange Mount / Chassis Mount | Surface Mount / Chassis Mount (flange) |
| Number of Terminals | 4 | — |
| Technology | W-CDMA, LTE Lateral N-Channel RF Power MOSFET | HV8 Lateral MOSFET |
| Surface Mount | No (flange mount) | — |
| Peak Reflow Temperature | 260 C (not applicable - flange mount) | — |
| Part Status (DigiKey) | Discontinued at Digi-Key | — |
| Drain-to-Source Voltage (Vdss) Rated | — | 65 V |
| Test Conditions Voltage | — | 28 V |
| Test Conditions Current (Idq) | — | 360 mA |
| Operating Frequency Range | — | 2110 MHz to 2170 MHz |
| Center Test Frequency | — | 2.17 GHz |
| Output Power (CW, Test) | — | 28 W |
| Maximum Power Dissipation | — | 118 W |
| Supplier Device Package | — | NI-780-4 |
| ऑपरेटिंग तापमान रेंज | — | [DATA_NEEDED: operating temperature range] |
| RoHS स्थिति | — | [DATA_NEEDED: RoHS status] |