MRF8HP21080HR5 vs MRF8HP21130HR5 비교
다음의 상세 나란히 비교: MRF8HP21080HR5 제조: NXP Semiconductors 및 MRF8HP21130HR5 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
NXP Semiconductors
MRF8HP21130HR5 - 130W LDMOS RF Power Transistor | NXP | LTE/W-CDMA
MRF8HP21130HR5 Obsolete사양 비교
| 파라미터 | MRF8HP21080HR5 | MRF8HP21130HR5 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | Obsolete | Obsolete |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $88.00 | $65.00 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| 트랜지스터 유형 | LDMOS, N-Channel, Dual (2 elements) | LDMOS, N-Channel, Dual |
| Configuration | Common Source, 2 Elements | Common Source, 2 Elements |
| Frequency | 2.17 GHz (2110–2170 MHz cellular band) | — |
| Test Voltage | 28 V | — |
| Test Current | 150 mA | — |
| Power Gain | 14.4 dB at 2.17 GHz | 14 dB |
| Output Power (Avg.) | 16 W (W-CDMA/LTE) | — |
| Drain-Source Voltage Rating | 65 V | — |
| 패키지 / 케이스 | NI-780-4 (Case 465M) | NI-780-4 (ceramic flange) |
| 실장 유형 | Flange Mount / Chassis Mount | Surface Mount / Chassis Mount (flange) |
| Number of Terminals | 4 | — |
| Technology | W-CDMA, LTE Lateral N-Channel RF Power MOSFET | HV8 Lateral MOSFET |
| Surface Mount | No (flange mount) | — |
| Peak Reflow Temperature | 260 C (not applicable - flange mount) | — |
| Part Status (DigiKey) | Discontinued at Digi-Key | — |
| Drain-to-Source Voltage (Vdss) Rated | — | 65 V |
| Test Conditions Voltage | — | 28 V |
| Test Conditions Current (Idq) | — | 360 mA |
| Operating Frequency Range | — | 2110 MHz to 2170 MHz |
| Center Test Frequency | — | 2.17 GHz |
| Output Power (CW, Test) | — | 28 W |
| Maximum Power Dissipation | — | 118 W |
| Supplier Device Package | — | NI-780-4 |
| 동작 온도 범위 | — | [DATA_NEEDED: operating temperature range] |
| RoHS 상태 | — | [DATA_NEEDED: RoHS status] |