MRF8S21100HSR3 vs MRF8P26080HSR3 तुलना
विस्तृत दोनों ओर की तुलना MRF8S21100HSR3 द्वारा NXP Semiconductors और MRF8P26080HSR3 द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
NXP Semiconductors
MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP
MRF8S21100HSR3 ✓ सक्रियNXP Semiconductors
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
MRF8P26080HSR3 ✓ सक्रियविशेषता तुलना
| पैरामीटर | MRF8S21100HSR3 | MRF8P26080HSR3 |
|---|---|---|
| ब्रांड | NXP Semiconductors | NXP Semiconductors |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| ट्रांज़िस्टर प्रकार | N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | LDMOS (Laterally Diffused MOSFET) | Gen8 LDMOS (Silicon, Lateral) |
| Drain-Source Voltage (V(BR)DSS) | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V nominal | 28 V nominal |
| Frequency Range | 2110 MHz to 2170 MHz | 2500 MHz to 2700 MHz |
| Test Frequency | 2.14 GHz | — |
| Output Power (CW, typical) | 100 W | — |
| Average Output Power (W-CDMA) | 24 W | — |
| Power Gain (typ) | 18.3 dB at 2.14 GHz | — |
| Drain Current (ID, max) | [DATA_NEEDED: max ID rating] | — |
| पैकेज / केस | NI-780S (Case 465A-06), 3-pin ceramic flange | — |
| Configuration | Single, push-pull N/A | — |
| माउंटिंग प्रकार | Chassis / flange mount, screw-down | Through-hole flange-mount with screw attachment |
| Operating Class | Class AB or Class C | — |
| Application | W-CDMA, LTE base-station power amplifiers | — |
| RoHS स्थिति | Compliant (per NXP product family) | — |
| Lead-Free | Yes | — |
| Average Output Power (P3dB) | — | 14 W (W-CDMA, single-carrier) |
| Peak Output Power (CW) | — | 80 W |
| Drain-Source Voltage (VDSS max) | — | 65 V |
| Test Mode | — | Typical Doherty Single-Carrier W-CDMA |
| Application Class | — | Class AB or Class C capable |
| Modulation Formats | — | W-CDMA, LTE, OFDM, multi-carrier |
| पैकेज | — | NI-780S-4 (ceramic, flange-mount, air-cavity) |
| Lead Finish | — | Gold-plated (NiPdAu) |
| Lead-Free / RoHS | — | Compliant |
| ऑपरेटिंग तापमान रेंज | — | -40C to +150C (junction) |