MW4IC915NBR1 vs MW4IC915MBR1 तुलना
विस्तृत दोनों ओर की तुलना MW4IC915NBR1 द्वारा NXP Semiconductors और MW4IC915MBR1 द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
NXP Semiconductors
MW4IC915NBR1 - 15W RF LDMOS PA 860-960MHz | NXP TO-272WB-16
MW4IC915NBR1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | MW4IC915NBR1 | MW4IC915MBR1 |
|---|---|---|
| ब्रांड | NXP Semiconductors | NXP Semiconductors |
| श्रेणी | RF Amplifiers | RF Amplifiers |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | NXP Semiconductors (formerly Freescale / Motorola) | NXP Semiconductors |
| Part Number | MW4IC915NBR1 | — |
| Part Family | MW4IC915NB / MW4IC915GNB | — |
| Device Type | RF Power Amplifier (LDMOS, multi-stage, integrated) | — |
| Technology | High Voltage LDMOS IC | RF LDMOS (Laterally Diffused MOSFET) |
| Frequency Range (Target Band) | 860 MHz to 960 MHz | — |
| Usable Frequency Range | 750 MHz to 1000 MHz | — |
| Supply Voltage (Typical) | 26 V | — |
| Supply Voltage (Operating Range) | 26 V to 28 V | — |
| Output Power (Pulsed / CW) | 15 W | — |
| Target Modulations | GSM, GSM EDGE, TDMA, N-CDMA, W-CDMA | — |
| पैकेज | TO-272 WB-16 (over-molded plastic) | TO-272 WB-16 (Case 1329-09), overmolded plastic |
| माउंटिंग प्रकार | Surface Mount | Surface Mount / Flange (TO-272 style) |
| Construction | Multi-stage, on-chip input matching | — |
| Operating Temperature (Min) | -10 °C | — |
| Operating Temperature (Max) | +85 °C | — |
| RoHS स्थिति | [DATA_NEEDED: RoHS status - N-suffix implies lead-free transition per datasheet PDF title] | Compliant |
| Replaces | MW4IC915MBR1 (N suffix indicates lead-free transition, no form/fit/function change) | — |
| Product Family | — | MW4IC915 |
| फ़ंक्शन | — | RF LDMOS Wideband Integrated Power Amplifier |
| Frequency Range | — | 750 MHz to 1 GHz (operating band 860-960 MHz per datasheet) |
| Output Power (CW) | — | 15 W typical at 26 V |
| सप्लाई वोल्टेज | — | 26 V typical |
| Configuration | — | Two-stage integrated amplifier with on-chip matching |
| Target Applications | — | GSM, GSM EDGE, N-CDMA, W-CDMA base stations |
| Input Matching | — | On-chip, integrated |
| Output Matching | — | On-chip, integrated |
| Lead Free | — | Yes |