MW4IC915NBR1 vs MW4IC915MBR1 比較
詳細並排比較 MW4IC915NBR1 由 NXP Semiconductors 與 MW4IC915MBR1 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MW4IC915NBR1 | MW4IC915MBR1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | RF Amplifiers | RF Amplifiers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | NXP Semiconductors (formerly Freescale / Motorola) | NXP Semiconductors |
| Part Number | MW4IC915NBR1 | — |
| Part Family | MW4IC915NB / MW4IC915GNB | — |
| Device Type | RF Power Amplifier (LDMOS, multi-stage, integrated) | — |
| Technology | High Voltage LDMOS IC | RF LDMOS (Laterally Diffused MOSFET) |
| Frequency Range (Target Band) | 860 MHz to 960 MHz | — |
| Usable Frequency Range | 750 MHz to 1000 MHz | — |
| Supply Voltage (Typical) | 26 V | — |
| Supply Voltage (Operating Range) | 26 V to 28 V | — |
| Output Power (Pulsed / CW) | 15 W | — |
| Target Modulations | GSM, GSM EDGE, TDMA, N-CDMA, W-CDMA | — |
| 封裝 | TO-272 WB-16 (over-molded plastic) | TO-272 WB-16 (Case 1329-09), overmolded plastic |
| 安裝類型 | Surface Mount | Surface Mount / Flange (TO-272 style) |
| Construction | Multi-stage, on-chip input matching | — |
| Operating Temperature (Min) | -10 °C | — |
| Operating Temperature (Max) | +85 °C | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status - N-suffix implies lead-free transition per datasheet PDF title] | Compliant |
| Replaces | MW4IC915MBR1 (N suffix indicates lead-free transition, no form/fit/function change) | — |
| Product Family | — | MW4IC915 |
| 功能 | — | RF LDMOS Wideband Integrated Power Amplifier |
| Frequency Range | — | 750 MHz to 1 GHz (operating band 860-960 MHz per datasheet) |
| Output Power (CW) | — | 15 W typical at 26 V |
| 供應電壓 | — | 26 V typical |
| Configuration | — | Two-stage integrated amplifier with on-chip matching |
| Target Applications | — | GSM, GSM EDGE, N-CDMA, W-CDMA base stations |
| Input Matching | — | On-chip, integrated |
| Output Matching | — | On-chip, integrated |
| Lead Free | — | Yes |