RTAX1000S-LG624V vs RTAX2000S-LG624V तुलना
विस्तृत दोनों ओर की तुलना RTAX1000S-LG624V द्वारा Microchip Technology और RTAX2000S-LG624V द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Microchip Technology
RTAX1000S-LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000S-LG624V ✓ सक्रियMicrochip Technology
RTAX2000S-LG624V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-LG624V ✓ सक्रियविशेषता तुलना
| पैरामीटर | RTAX1000S-LG624V | RTAX2000S-LG624V |
|---|---|---|
| ब्रांड | Microchip Technology | Microchip Technology |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Family | RTAX-S/SL Radiation-Tolerant FPGA | RTAX-S/SL Radiation-Tolerant FPGAs |
| Equivalent System Gates | 1,000,000 | 2,000,000 gates |
| Logic Cells | 18144 | 32,256 |
| Configurable Logic Blocks (CLBs) | 12096 | 21,504 |
| Technology | Digital CMOS, antifuse-based | — |
| Core Supply Voltage | 1.5 V (nominal) | — |
| Configuration Type | One-Time Programmable (antifuse), live at power-up | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | up to 540 kbits SRAM |
| पैकेज | CG624 (624-pin ceramic column grid array, LG624) | CG624 ceramic column grid array (LG624) |
| ऑपरेटिंग तापमान | -55C to +125C | [DATA_NEEDED: operating temperature range] |
| Application Domain | Space-flight systems, radiation-tolerant | — |
| Maximum Family Density | 4,000,000 equivalent system gates (family) | — |
| माउंटिंग प्रकार | Surface Mount | — |
| Number of User I/O | [DATA_NEEDED: number of user I/O for LG624 package] | — |
| Block RAM Capacity | [DATA_NEEDED: embedded SRAM bit capacity] | — |
| RoHS स्थिति | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance] |
| Memory Protection | — | optional EDAC protection |
| User I/Os | — | up to 684 |
| Program Technology | — | Nonvolatile antifuse (one-time programmable) |
| Power-Up Behavior | — | Live at power-up |
| Total Ionizing Dose (Functional) | — | 300 krad |
| Total Ionizing Dose (Parametric) | — | 200 krad |
| SEU Rate | — | < 1E-10 errors per bit-day |
| Base Commercial Family | — | Axcelerator |
| Primary Application Domain | — | Space-flight systems |
| सप्लाई वोल्टेज | — | [DATA_NEEDED: core and I/O supply voltage] |