RTAX2000D-1CQ352V vs RTAX2000DL-CQ352V तुलना
विस्तृत दोनों ओर की तुलना RTAX2000D-1CQ352V द्वारा Microchip Technology और RTAX2000DL-CQ352V द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Microchip Technology
RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352V ✓ सक्रियMicrochip Technology
RTAX2000DL-CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352V ✓ सक्रियविशेषता तुलना
| पैरामीटर | RTAX2000D-1CQ352V | RTAX2000DL-CQ352V |
|---|---|---|
| ब्रांड | Microchip Technology | Microchip Technology |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Equivalent Gates | 2,000,000 | — |
| Logic Cells | 29,568 | 29,568 |
| CLBs | 19,712 | 19,712 |
| Core Supply Voltage | 1.425 V to 1.575 V (nominal 1.5 V) | 1.5 V nominal (1.425 V to 1.575 V) |
| DSP Mathblocks | Up to 120 | Up to 120 (18-bit x 18-bit MAC, up to 125 MHz) |
| DSP MAC Performance | 125 MHz, 18-bit x 18-bit multiply-accumulate | — |
| Embedded Memory | Up to 540 kbits with optional EDAC protection | Up to 540 kbits SRAM with optional EDAC |
| Technology | Digital CMOS, antifuse (nonvolatile) | CMOS, antifuse (nonvolatile, one-time programmable) |
| Total Ionizing Dose (Functional) | 300 krad (Si) | — |
| Total Ionizing Dose | 200 krad (Si) | — |
| Configuration | Live at power-up, single-chip, no external configuration device | Live-at-power-up (antifuse, no external boot device) |
| Speed Grade | -1 | — |
| पैकेज | CQFP-352 (CQ352), ceramic | CQFP-352, hermetically sealed ceramic, metal-sealed cofired |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Screening | RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test) | — |
| ऑपरेटिंग तापमान | [DATA_NEEDED: Operating Temperature] | -55C to +125C |
| RoHS स्थिति | [DATA_NEEDED: RoHS Status] | — |
| Equivalent System Gates | — | 2,000,000 |
| Maximum Combinatorial Delay | — | 1.100 ns |
| Total Ionizing Dose (TID) | — | 300 krad (functional); 200 krad (per family data) |
| Terminal Pitch | — | 0.500 mm |
| Family | — | RTAX-DSP (RTAX-S/SL and RTAX-DSP radiation-tolerant FPGAs) |