RTAX2000D-1CQ352V vs RTAX2000DL-CQ352V 比較
詳細並排比較 RTAX2000D-1CQ352V 由 Microchip Technology 與 RTAX2000DL-CQ352V 由 Microchip Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Microchip Technology
RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352V ✓ 啟用中Microchip Technology
RTAX2000DL-CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352V ✓ 啟用中規格比較
| 參數 | RTAX2000D-1CQ352V | RTAX2000DL-CQ352V |
|---|---|---|
| 品牌 | Microchip Technology | Microchip Technology |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Equivalent Gates | 2,000,000 | — |
| Logic Cells | 29,568 | 29,568 |
| CLBs | 19,712 | 19,712 |
| Core Supply Voltage | 1.425 V to 1.575 V (nominal 1.5 V) | 1.5 V nominal (1.425 V to 1.575 V) |
| DSP Mathblocks | Up to 120 | Up to 120 (18-bit x 18-bit MAC, up to 125 MHz) |
| DSP MAC Performance | 125 MHz, 18-bit x 18-bit multiply-accumulate | — |
| Embedded Memory | Up to 540 kbits with optional EDAC protection | Up to 540 kbits SRAM with optional EDAC |
| Technology | Digital CMOS, antifuse (nonvolatile) | CMOS, antifuse (nonvolatile, one-time programmable) |
| Total Ionizing Dose (Functional) | 300 krad (Si) | — |
| Total Ionizing Dose | 200 krad (Si) | — |
| Configuration | Live at power-up, single-chip, no external configuration device | Live-at-power-up (antifuse, no external boot device) |
| Speed Grade | -1 | — |
| 封裝 | CQFP-352 (CQ352), ceramic | CQFP-352, hermetically sealed ceramic, metal-sealed cofired |
| 安裝類型 | Surface Mount | Surface Mount |
| Screening | RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test) | — |
| 工作溫度 | [DATA_NEEDED: Operating Temperature] | -55C to +125C |
| RoHS 狀態 | [DATA_NEEDED: RoHS Status] | — |
| Equivalent System Gates | — | 2,000,000 |
| Maximum Combinatorial Delay | — | 1.100 ns |
| Total Ionizing Dose (TID) | — | 300 krad (functional); 200 krad (per family data) |
| Terminal Pitch | — | 0.500 mm |
| Family | — | RTAX-DSP (RTAX-S/SL and RTAX-DSP radiation-tolerant FPGAs) |