RTAX2000D-CQ352E vs RTAX2000DL-CQ352B तुलना
विस्तृत दोनों ओर की तुलना RTAX2000D-CQ352E द्वारा Microchip Technology और RTAX2000DL-CQ352B द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Microchip Technology
RTAX2000D-CQ352E - 2M-Gate Rad-Tolerant FPGA CQFP-352 | Microchip
RTAX2000D-CQ352E ✓ सक्रियMicrochip Technology
RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352B ✓ सक्रियविशेषता तुलना
| पैरामीटर | RTAX2000D-CQ352E | RTAX2000DL-CQ352B |
|---|---|---|
| ब्रांड | Microchip Technology | Microchip Technology |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Family | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs | — |
| Equivalent System Gates | 2000000 gates | 2,000,000 |
| Logic Cells | 29568 cells | [DATA_NEEDED: Logic Cells] |
| CLB Organization | 19712 CLBs | — |
| अधिकतम क्लॉक फ़्रीक्वेंसी | 649 MHz | — |
| Number of Inputs | 166 | — |
| आउटपुट की संख्या | 166 | — |
| Technology | Digital CMOS, antifuse programmable | — |
| पैकेज | CQFP-352 (352-terminal ceramic quad flat pack) | 352-terminal ceramic CQFP, metal-sealed |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Screening | MIL-STD-883 Class (per distributor data) | — |
| Program Type | One-time programmable (antifuse) | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits with optional EDAC protection |
| System Features | Segmentable clocks, chip-wide highway routing, carry logic | — |
| ऑपरेटिंग तापमान | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| सप्लाई वोल्टेज | [DATA_NEEDED: core supply voltage] | — |
| Radiation Tolerance (TID) | [DATA_NEEDED: total ionizing dose rating] | — |
| RoHS स्थिति | [DATA_NEEDED: RoHS status] | — |
| CLBs | — | 19,712 |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Programming Technology | — | Nonvolatile antifuse |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parameter) | — | 200 krad (Si) |
| Core Supply Voltage (Nominal) | — | 1.5 V |
| Core Supply Voltage Range | — | 1.425 V to 1.575 V |
| Terminal Pitch | — | 0.500 mm |
| Configuration | — | Live at power-up, no external boot PROM required |
| Application Domain | — | Space flight systems |