RTAX250S-1CQ352V vs RTAX1000SL-CQ352V तुलना
विस्तृत दोनों ओर की तुलना RTAX250S-1CQ352V द्वारा Microchip Technology और RTAX1000SL-CQ352V द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Microchip Technology
RTAX250S-1CQ352V - 250K-Gate Rad-Tolerant FPGA | Microchip
RTAX250S-1CQ352V ✓ सक्रियMicrochip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ सक्रियविशेषता तुलना
| पैरामीटर | RTAX250S-1CQ352V | RTAX1000SL-CQ352V |
|---|---|---|
| ब्रांड | Microchip Technology | Microchip Technology |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Microchip Technology (Microsemi/Actel) | — |
| Family | RTAX-S Radiation-Tolerant FPGAs | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| Equivalent Gate Count | 250,000 gates | — |
| Logic Cells | 4,224 | 18,144 |
| CLBs | 2,816 | — |
| Additional ASIC Gates | 30,000 | — |
| Core Supply Voltage (Nominal) | 1.5 V | — |
| Core Supply Voltage Range | 1.425 V to 1.575 V | — |
| Process Technology | CMOS | 0.15 um CMOS |
| Speed Grade | -1 | — |
| पैकेज | CQ352 (352-pin ceramic column quad flat package) | 352-pin Ceramic CQFP (CQ352V) |
| Programming Technology | Antifuse, one-time programmable, live at power-up | Antifuse (one-time programmable) |
| Target Environment | Radiation-tolerant, spaceflight | — |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| ऑपरेटिंग तापमान | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Configuration | Single-chip, no external configuration device required | — |
| RoHS स्थिति | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Equivalent System Gates | — | 1,000,000 |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Core Voltage | — | 1.5 V |
| Radiation Tolerance | — | Radiation-tolerant, space-flight qualified family |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| Embedded Memory | — | Embedded SRAM with built-in FIFO control logic |
| I/O Voltage | — | [DATA_NEEDED: I/O bank voltage range] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| MSL स्तर | — | [DATA_NEEDED: moisture sensitivity level] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |