RTAX250S-1LG624B vs RTAX2000S-1LG624V तुलना
विस्तृत दोनों ओर की तुलना RTAX250S-1LG624B द्वारा Microchip Technology और RTAX2000S-1LG624V द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Microchip Technology
RTAX250S-1LG624B - Rad-Tolerant FPGA 250K Gates | Microchip
RTAX250S-1LG624B ✓ सक्रियMicrochip Technology
RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip
RTAX2000S-1LG624V ✓ सक्रियविशेषता तुलना
| पैरामीटर | RTAX250S-1LG624B | RTAX2000S-1LG624V |
|---|---|---|
| ब्रांड | Microchip Technology | Microchip Technology |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Family | RTAX-S Radiation-Tolerant FPGA | — |
| Equivalent System Gates | 250000 gates | 2,000,000 gates |
| Logic Cells (Modules) | 2816 cells | — |
| Registers / Logic Cells Total | 4224 logic cells | — |
| User I/O | 248 I/O | — |
| Core Supply Voltage | 1.5 V | [DATA_NEEDED: core supply voltage] |
| Maximum System Frequency | 649 MHz | — |
| Process Technology | 0.15 um CMOS | Digital CMOS |
| Speed Grade | -1 | -1 |
| पैकेज | 624-Pin LGA (LG624), ceramic | CG624, 624-pin ceramic column grid array |
| ऑपरेटिंग तापमान | -55C to +125C | — |
| Configuration | Anti-fuse, live at power-up (single chip) | Single-chip, live at power-up (no boot device required) |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits SRAM with optional EDAC protection |
| Radiation Tolerance | Radiation-tolerant (RTAX-S class, per Microchip RTAX-S datasheet) | — |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Program Numbering | B = Military program-level screening | — |
| RoHS स्थिति | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL स्तर | [DATA_NEEDED: moisture sensitivity level] | — |
| Configurable Logic Blocks (CLBs) | — | 21,504 |
| User I/Os (maximum, family) | — | Up to 684 |
| Total Ionizing Dose (TID), functional | — | 300 krad (Si) |
| Total Ionizing Dose (TID), parametric | — | 200 krad (Si) |
| SEU Immunity | — | Less than 1E-10 errors per bit-day |
| Programming Technology | — | One-time programmable antifuse, nonvolatile |
| Package Temperature Suffix | — | V (space/military screening variant) |
| Family Lineage | — | RTAX-S/SL, based on commercial Axcelerator family |
| ऑपरेटिंग तापमान रेंज | — | [DATA_NEEDED: operating temperature range] |