RTAX4000D-CQ352B vs RTAX2000D-1CQ352B तुलना
विस्तृत दोनों ओर की तुलना RTAX4000D-CQ352B द्वारा Microchip Technology और RTAX2000D-1CQ352B द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Microchip Technology
RTAX4000D-CQ352B - 4M-Gate Rad-Tolerant FPGA CQFP-352 | Microchip
RTAX4000D-CQ352B ✓ सक्रियMicrochip Technology
RTAX2000D-1CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352B ✓ सक्रियविशेषता तुलना
| पैरामीटर | RTAX4000D-CQ352B | RTAX2000D-1CQ352B |
|---|---|---|
| ब्रांड | Microchip Technology | Microchip Technology |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Logic Cells | 55,440 | — |
| Configurable Logic Blocks (CLBs) | 36,960 | — |
| Equivalent Gates | 4,000,000 | — |
| System Gates (cells, per Jotrin listing) | 33,600 | — |
| Family | RTAX-DSP (RTAX-S/SL/DSP) | RTAX-S/SL and RTAX-DSP (RTAX2000D) |
| Process Technology | 0.15 um | — |
| Core Supply Voltage | 1.5 V (1.425 V to 1.575 V) | 1.5 V nominal (1.425 V to 1.575 V) |
| Combinatorial CLB Delay | [DATA_NEEDED: combinatorial CLB delay for standard speed grade; 0.99 ns max is specified for the -1 speed grade variant] | — |
| Technology Type | Antifuse, one-time programmable, radiation-tolerant | — |
| पैकेज | 352-pin Ceramic CQFP (CQFP-352) | 352-pin Ceramic Column Grid Array (CQ352) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount (ceramic column grid array) |
| Configuration | Live at power-up, single chip, no external configuration memory | Live at power-up, no external configuration device (antifuse) |
| Radiation Tolerance | Radiation-tolerant (space-flight qualified family) | — |
| Application Domain | Space flight systems | Space-flight, radiation-tolerant |
| Programmability | OTP (one-time programmable antifuse) | — |
| RoHS स्थिति | [DATA_NEEDED: RoHS status] | — |
| ऑपरेटिंग तापमान | [DATA_NEEDED: operating temperature range] | — |
| Technology | — | Antifuse (nonvolatile), Digital CMOS |
| Equivalent System Gates | — | 2,000,000 |
| CLBs (Logic Cells) | — | 19,712 CLBs / 29,568 logic cells (per family organization) |
| DSP Mathblocks | — | Up to 120 (18-bit x 18-bit MAC) |
| DSP Performance | — | 125 MHz 18-bit x 18-bit multiply-accumulate |
| Embedded Memory | — | Up to 540 kbits SRAM with optional EDAC |
| Total Ionizing Dose | — | 300 krad (Si) functional / 200 krad (Si) with operation |
| Speed Grade | — | -1 |
| Temperature Range | — | Commercial (C) |
| Routing Features | — | Segmentable clocks, chip-wide highway routing, carry logic |
| Embedded SRAM Features | — | Built-in FIFO control logic |