RTAX4000D-CQ352B vs RTAX2000D-1CQ352B 比較

詳細並排比較 RTAX4000D-CQ352B 由 Microchip Technology 與 RTAX2000D-1CQ352B 由 Microchip Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Microchip Technology
RTAX4000D-CQ352B RTAX4000D-CQ352B - 4M-Gate Rad-Tolerant FPGA CQFP-352 | Microchip

RTAX4000D-CQ352B - 4M-Gate Rad-Tolerant FPGA CQFP-352 | Microchip

RTAX4000D-CQ352B ✓ 啟用中
Microchip Technology
RTAX2000D-1CQ352B RTAX2000D-1CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352B ✓ 啟用中

規格比較

參數 RTAX4000D-CQ352B RTAX2000D-1CQ352B
品牌 Microchip Technology Microchip Technology
類別 FPGA & CPLD FPGA & CPLD
生命週期狀態 啟用中 啟用中
Logic Cells 55,440 —
Configurable Logic Blocks (CLBs) 36,960 —
Equivalent Gates 4,000,000 —
System Gates (cells, per Jotrin listing) 33,600 —
Family RTAX-DSP (RTAX-S/SL/DSP) RTAX-S/SL and RTAX-DSP (RTAX2000D)
Process Technology 0.15 um —
Core Supply Voltage 1.5 V (1.425 V to 1.575 V) 1.5 V nominal (1.425 V to 1.575 V)
Combinatorial CLB Delay [DATA_NEEDED: combinatorial CLB delay for standard speed grade; 0.99 ns max is specified for the -1 speed grade variant] —
Technology Type Antifuse, one-time programmable, radiation-tolerant —
封裝 352-pin Ceramic CQFP (CQFP-352) 352-pin Ceramic Column Grid Array (CQ352)
安裝類型 Surface Mount Surface Mount (ceramic column grid array)
Configuration Live at power-up, single chip, no external configuration memory Live at power-up, no external configuration device (antifuse)
Radiation Tolerance Radiation-tolerant (space-flight qualified family) —
Application Domain Space flight systems Space-flight, radiation-tolerant
Programmability OTP (one-time programmable antifuse) —
RoHS 狀態 [DATA_NEEDED: RoHS status] —
工作溫度 [DATA_NEEDED: operating temperature range] —
Technology — Antifuse (nonvolatile), Digital CMOS
Equivalent System Gates — 2,000,000
CLBs (Logic Cells) — 19,712 CLBs / 29,568 logic cells (per family organization)
DSP Mathblocks — Up to 120 (18-bit x 18-bit MAC)
DSP Performance — 125 MHz 18-bit x 18-bit multiply-accumulate
Embedded Memory — Up to 540 kbits SRAM with optional EDAC
Total Ionizing Dose — 300 krad (Si) functional / 200 krad (Si) with operation
Speed Grade — -1
Temperature Range — Commercial (C)
Routing Features — Segmentable clocks, chip-wide highway routing, carry logic
Embedded SRAM Features — Built-in FIFO control logic

資料表與資源

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