10AX090S2F45E2LG vs 10AX090S3F45E2LG Perbandingan
Perbandingan bersamaan detil 10AX090S2F45E2LG dari Intel dan 10AX090S3F45E2LG dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | 10AX090S2F45E2LG | 10AX090S3F45E2LG |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Family | Arria 10 GX | — |
| Logic Elements | 900,000 | 900,000 |
| Embedded Memory (bits) | 59,234,304 | 59,234,304 |
| DSP Blocks | Variable-precision, 24-bit multiplier base | 1,518 |
| Adaptive Logic Modules (ALMs) | 338,200 | 339,620 |
| Transceiver Channels | Up to 24 (data rate per channel up to 14.1 Gbps) | — |
| Hard Memory Controllers | 4, supports DDR4 / DDR3 / RLDRAM3 / QDR IV | — |
| PCIe Hard IP | PCI Express Gen3 x8 / Gen2 x8 | — |
| Process Technology | 20 nm Tri-Gate (FinFET) | — |
| Speed Grade | E2 (commercial/extended) | S3 (-2 speed grade equivalent) |
| Paket | 1932-ball FCBGA, 45 mm body (F45) | 1932-ball FCBGA (F45, 45mm flip-chip BGA) |
| Operating Temperature Grade | Industrial (per -LG suffix convention; verify against order code) | — |
| Core Voltage (Vcc) | 0.9 V (nominal; per family datasheet) | — |
| User I/O Banks | [DATA_NEEDED: total user I/O count for 10AX090S2F45E2LG] | 12 |
| RoHS / Lead-Free | Yes (LG suffix indicates Pb-free) | — |
| Configuration Interface | Active serial (EPCQ-L), JTAG, Fast Passive Parallel | — |
| Series | — | Arria 10 GX |
| Transceivers | — | 624 (per package aggregate channels) |
| Maximum Transceiver Data Rate | — | 17.4 Gbps (GX variant, datasheet ceiling up to 25.78 Gbps on GT) |
| Process Node | — | TSMC 20nm |
| Core Voltage (nominal) | — | 0.9 V |
| Maximum User I/O | — | 624 |
| Rentang Suhu Kerja | — | 0C to 100C (E2 commercial) |
| Tipe Mounting | — | Surface Mount (BGA) |
| Status RoHS | — | Compliant |
| Memory Interfaces | — | DDR4 up to 2666 MT/s, DDR3, QDR IV, RLDRAM 3 |