1ED3124MU12HXUMA1 vs 1ED3323MC12NXUMA1 Perbandingan

Perbandingan bersamaan detil 1ED3124MU12HXUMA1 dari Infineon dan 1ED3323MC12NXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
1ED3323MC12NXUMA1 1ED3323MC12NXUMA1 - 5.7kV Isolated Gate Driver | Infineon

1ED3323MC12NXUMA1 - 5.7kV Isolated Gate Driver | Infineon

1ED3323MC12NXUMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum 1ED3124MU12HXUMA1 1ED3323MC12NXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Single-channel isolated gate driver IC —
Manufacturer Family EiceDRIVER Compact 1ED31xxMU12H (X3 compact) —
Peak Output Current (source/sink) 14 A typical —
Konfigurasi Output Separate source and sink pins —
Galvanic Isolation (rms) 5.7 kV (UL 1577) —
Working Voltage (continuous) 1200 V —
Common-Mode Transient Immunity (CMTI) 200 kV/us minimum [DATA_NEEDED: CMTI in kV/us]
Propagation Delay (typ.) 90 ns —
UVLO Threshold 10.5 V —
Isolation Technology Coreless transformer (CT) Coreless Transformer (CT)
Paket PG-DSO-8-66 (DSO-8 wide-body) PG-DSO-16-40
Creepage Distance >8 mm —
Rentang Suhu Kerja -40C to +125C -40 C to +125 C
Target Switch Types IGBT, power MOSFET, SiC MOSFET —
Recommended Switch Class Up to 2300 V IGBT / SiC modules —
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL2 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Fungsi — Single-channel isolated gate driver
Isolation Voltage (Vrms) — 5.7 kVrms
Peak Source Current — 8.5 A
Peak Sink Current — 9 A
Number of Channels — 1
Primary-Side Supply Voltage (VDD1) — 3.1 V to 5.5 V
Secondary-Side Supply Voltage (VCC2) — 9 V to 18 V
Propagation Delay (typ) — 85 ns
Protection Features — DESAT short-circuit, soft-off, Miller clamp, UVLO
Family — EiceDRIVER F3 Enhanced (1ED332x)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon