BFU520R vs BFU520W Perbandingan
Perbandingan bersamaan detil BFU520R dari NXP Semiconductors dan BFU520W dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BFU520R | BFU520W |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | Transistors | Transistors |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | NPN wideband silicon RF BJT | — |
| Tegangan Pemisah-Penjana (Vceo) | 12 V | [DATA_NEEDED: VCEO] |
| Collector Current (IC max) | 30 mA | — |
| Frekuensi Transisi (ft) | 10.5 GHz | [DATA_NEEDED: fT] |
| Total Power Dissipation | 450 mW | — |
| Frequency Range | up to 2 GHz application range | — |
| Paket | SOT-143B (4-pin, dual-emitter, plastic) | SOT323 (3-pin plastic) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Noise Performance | Low noise, high breakdown | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Family | BFU5 (BFU5x wideband silicon RF transistors) | — |
| Configuration | Single NPN, dual-emitter | — |
| Application Class | Small signal to medium power | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: TJ range] |
| Noise Figure | [DATA_NEEDED: noise figure in dB] | — |
| Gain | [DATA_NEEDED: gain] | — |
| Polarity | — | NPN |
| Technology | — | Silicon wideband RF BJT |
| Application Frequency Range | — | Up to 2 GHz |
| AEC-Q101 | — | Qualified |
| Product Family | — | NXP BFU5 family |
| Primary Use Case | — | High speed, low noise small-signal to medium power RF applications |
| Tegangan Dasar Pemisah (Vcbo) | — | [DATA_NEEDED: VCBO] |
| Continuous Collector Current (IC) | — | [DATA_NEEDED: IC] |
| Total Power Dissipation (Ptot) | — | [DATA_NEEDED: Ptot] |
| Noise Figure (NF) | — | [DATA_NEEDED: NF] |
| DC Current Gain (hFE) | — | [DATA_NEEDED: hFE] |