BSC010NE2LSIATMA1 vs BSC0901NSATMA1 Perbandingan
Perbandingan bersamaan detil BSC010NE2LSIATMA1 dari Infineon dan BSC0901NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC010NE2LSIATMA1 | BSC0901NSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series / Family | OptiMOS 25V | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at TA | 38 A | — |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 96 W | — |
| Paket | PG-TDSON-8-7 (TDSON-8 EP) | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Tipe Mounting | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | Single N-Channel with Built-in Diode |
| Technology | OptiMOS (Trench) | N-Channel Trench MOSFET (OptiMOS) |
| Rentang Suhu Kerja | -55C to +150C (TJ) | -55C to +150C |
| Jumlah Pin | 8 | — |
| Status RoHS | Compliant | Compliant |
| Gate Drive | Logic-level compatible | — |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| Rds(on) at 10V | [DATA_NEEDED: Rds(on) at VGS=10V] | — |
| Rds(on) at 4.5V | [DATA_NEEDED: Rds(on) at VGS=4.5V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Part Family | — | OptiMOS 30V |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Tingkat Sensitivitas Kekeringan (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |