BSC010NE2LSIATMA1 vs BSC0901NSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC010NE2LSIATMA1 sa pamamagitan ng Infineon at BSC0901NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSC010NE2LSIATMA1 | BSC0901NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series / Family | OptiMOS 25V | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at TA | 38 A | — |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 96 W | — |
| Packhaging | PG-TDSON-8-7 (TDSON-8 EP) | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | Single N-Channel with Built-in Diode |
| Technology | OptiMOS (Trench) | N-Channel Trench MOSFET (OptiMOS) |
| Hanay ng Temperature na Operasyon | -55C to +150C (TJ) | -55C to +150C |
| Bilang ng Pin | 8 | — |
| Tindminan RoHS | Compliant | Compliant |
| Gate Drive | Logic-level compatible | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Rds(on) at 10V | [DATA_NEEDED: Rds(on) at VGS=10V] | — |
| Rds(on) at 4.5V | [DATA_NEEDED: Rds(on) at VGS=4.5V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Part Family | — | OptiMOS 30V |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Level ng Sensitivity sa Asid ng Moisture (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |