BSC010NE2LSIATMA1 vs BSC0901NSATMA1 比較
詳細並排比較 BSC010NE2LSIATMA1 由 Infineon 與 BSC0901NSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC010NE2LSIATMA1 | BSC0901NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series / Family | OptiMOS 25V | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at TA | 38 A | — |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 96 W | — |
| 封裝 | PG-TDSON-8-7 (TDSON-8 EP) | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| 安裝類型 | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | Single N-Channel with Built-in Diode |
| Technology | OptiMOS (Trench) | N-Channel Trench MOSFET (OptiMOS) |
| 工作溫度範圍 | -55C to +150C (TJ) | -55C to +150C |
| 腳位數 | 8 | — |
| RoHS 狀態 | Compliant | Compliant |
| Gate Drive | Logic-level compatible | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | — |
| Rds(on) at 10V | [DATA_NEEDED: Rds(on) at VGS=10V] | — |
| Rds(on) at 4.5V | [DATA_NEEDED: Rds(on) at VGS=4.5V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Part Family | — | OptiMOS 30V |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| 濕度敏感等級 (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |