BSC010NE2LSIATMA1 vs BSC094N06LS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC010NE2LSIATMA1 dari Infineon dan BSC094N06LS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC010NE2LSIATMA1 BSC094N06LS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series / Family OptiMOS 25V —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (ID) at TA 38 A —
Continuous Drain Current (ID) at TC 100 A —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 96 W —
Paket PG-TDSON-8-7 (TDSON-8 EP) PG-TDSON-8-6 (SuperSO8 5x6)
Tipe Mounting Surface Mount Surface Mount
Configuration Single N-Channel —
Technology OptiMOS (Trench) OptiMOS™ 5 (logic-level)
Rentang Suhu Kerja -55C to +150C (TJ) —
Jumlah Pin 8 —
Status RoHS Compliant Compliant
Gate Drive Logic-level compatible —
Level MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Rds(on) at 10V [DATA_NEEDED: Rds(on) at VGS=10V] —
Rds(on) at 4.5V [DATA_NEEDED: Rds(on) at VGS=4.5V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Part Number — BSC094N06LS5ATMA1
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=25°C — 47 A
Continuous Drain Current (ID) at TC=100°C — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
RDS(on) max at VGS=10 V — 9.4 mΩ
RDS(on) max at VGS=4.5 V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/range]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25°C — 36 W
Suhu Hubung Kerja — -55 °C to +150 °C

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon