BSC011N03LSIATMA1 vs BSC0504NSIATMA1 Perbandingan

Perbandingan bersamaan detil BSC011N03LSIATMA1 dari Infineon dan BSC0504NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC011N03LSIATMA1 BSC0504NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS™ 30 V —
Channel Type N-Channel —
Drain-to-Source Voltage (VDS) 30 V —
Gate-to-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) at TA=25°C 37 A —
Continuous Drain Current (ID) at TC=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM value] —
On-State Resistance RDS(on) at VGS=10V 1.1 mΩ (typical) —
Power Dissipation at TA=25°C 2.5 W —
Power Dissipation at TC=25°C 96 W —
Suhu Hubung Kerja -55 °C to +150 °C —
Paket PG-TDSON-8-7 (Surface Mount) PG-TDSON-8-6
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant unknown
Tipe Transistor — N-channel MOSFET
Drain-to-Source Voltage — 30 V
Continuous Drain Current at Ta — 21 A
Continuous Drain Current at Tc — 72 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
Technology Family — OptiMOS 5
Jumlah Pin — 8 pins
Exposed Pad — Yes, according to distributor package description
On-State Resistance — [DATA_NEEDED: on-state resistance]
Gate Charge — [DATA_NEEDED: gate charge]
Tegangan Batas Gerbang — [DATA_NEEDED: gate threshold voltage]
Tahanan Panas — [DATA_NEEDED: thermal resistance]
Rentang Suhu Kerja — [DATA_NEEDED: operating temperature range]
AEC-Q100 Qualification — [DATA_NEEDED: AEC-Q100 qualification]
Lead-Free Status — unknown
Halogen-Free Status — unknown
REACH Status — unknown

Spek dan Sumber

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