BSC014N06NSATMA1 vs BSC030N08NS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC014N06NSATMA1 dari Infineon dan BSC030N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC014N06NSATMA1 BSC030N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V —
Gate-Source Voltage (VGS) Max +/- 20 V —
Continuous Drain Current (ID) at Ta 30 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) Typ @ VGS=10V 1.4 mOhm —
On-Resistance RDS(on) Max @ VGS=10V 1.45 mOhm —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 156 W —
Rentang Suhu Kerja -55C to +150C —
Paket PG-TDSON-8-17 (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Technology OptiMOS 5 (shielded-gate trench) OptiMOS 5
Product Type — N-Channel Power MOSFET
Drain-Source Voltage (VDS) max — 80 V
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (ID,pulse) — 161 A
Gate-Source Voltage (VGS) max — +/-20 V
RDS(on) max at VGS=10 V — 3.0 mOhm
RDS(on) max at VGS=7 V — [DATA_NEEDED: RDS(on) at VGS=7V]
Power Dissipation (Ta=25C, 1.5mm FR4) — 2.5 W
Power Dissipation (TC=25C) — 139 W
Operating Temperature Range (TJ) — -55C to +150C
Bebas Halogen — Yes
Lead-Free — Yes
Gate Drive Logic — Standard 10V, compatible with 12V drive
Optimized Application — Synchronous Rectification

Spek dan Sumber

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