BSC015NE2LS5IATMA1 vs BSZ011NE2LS5IATMA1 Perbandingan
Perbandingan bersamaan detil BSC015NE2LS5IATMA1 dari Infineon dan BSZ011NE2LS5IATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC015NE2LS5IATMA1 | BSZ011NE2LS5IATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 25V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 25 V | — |
| Continuous Drain Current (ID) at Ta | 33 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 1.5 mOhm | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 50 W | — |
| Paket | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 8 | — |
| Technology | OptiMOS 5 trench | OptiMOS 5 (Trench) |
| Rentang Suhu Kerja | -55C to +150C (junction) | -55°C to +150°C |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge Qg Typ | [DATA_NEEDED: Qg typical value] | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at TA=25°C | — | 35 A |
| Continuous Drain Current (ID) at TC=25°C | — | 40 A |
| On-State Resistance RDS(on) max at VGS=10 V | — | 1.1 mΩ (typical, per datasheet title) |
| Power Dissipation at TA=25°C | — | 2.1 W |
| Power Dissipation at TC=25°C | — | 69 W |
| Gate Threshold Voltage VGS(th) | — | 1.0 V to 2.0 V (typical 1.5 V) |
| Gate Drive Voltage (recommended) | — | 4.5 V to 10 V |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes |