BSC019N04NSGATMA1 vs BSZ130N03LSGATMA1 Perbandingan

Perbandingan bersamaan detil BSC019N04NSGATMA1 dari Infineon dan BSZ130N03LSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC019N04NSGATMA1 BSZ130N03LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Technology OptiMOS (trench) —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25C 100 A —
Continuous Drain Current (ID) at TA=25C 30 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
RDS(on) max at VGS=10V 2.5 mΩ —
RDS(on) typ at VGS=10V 1.9 mΩ —
Gate-Source Threshold (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at TA=25C 2.5 W —
Power Dissipation (PD) at TC=25C 125 W —
Rentang Suhu Kerja -55C to +150C -55 C to +150 C (junction)
Paket PG-TDSON-8-1 (TDSON-8 FL) PG-TSDSON-8 (8-PowerTDFN, 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Family — OptiMOS 25V / 30V
Polarity / Channel Type — N-Channel Enhancement Mode
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Ta=25 C) — 10 A
Arus Alir Berlanjut (TC=25°C) — 35 A
On-State Resistance Rds(on) max @ Vgs=10V — 13 mOhm
Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA — 2.2 V
Power Dissipation (Ta) — 2.1 W
Power Dissipation (Tc) — 25 W
Level MSL — 1 (per JEDEC J-STD-020)
Lead-Free — Yes
Bebas Halogen — Yes
Qualification — Industrial / Commercial (non-automotive)

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