BSC022N04LS6ATMA1 vs BSC010N04LSATMA1 Perbandingan
Perbandingan bersamaan detil BSC022N04LS6ATMA1 dari Infineon dan BSC010N04LSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC022N04LS6ATMA1 | BSC010N04LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS™ 6 (N-channel trench) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Ta | 27 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Maximum Pulsed Drain Current (IDM) | 139 A | — |
| On-Resistance RDS(on) max | 2.2 mOhm at VGS=10 V | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 79 W | — |
| Paket | SuperSO8 5x6 (PG-TDSON-8-1) | PG-TDSON-8 FL (SuperSO8 5x6) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Jumlah Pin | 8 | — |
| Suhu Kerja | -55 C to +175 C (junction) | — |
| Status RoHS | Compliant | — |
| Transistor Polarity | — | N-Channel |
| Drain-Source Breakdown Voltage (VDS) | — | 40 V |
| Gate-Source Voltage (VGS) Max | — | +/- 20 V |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Continuous Drain Current (ID, Ta=25C) | — | 38 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Max @ VGS=10V | — | 1.0 mOhm |
| On-Resistance RDS(on) Test Condition | — | VGS = 10 V, ID = 50 A |
| Gate Threshold Voltage VGS(th) Typ | — | 2 V |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (Tc=25C) | — | 139 W |
| Power Dissipation (Ta=25C) | — | 2.5 W |
| Rentang Suhu Kerja | — | -55C to +150C |
| Level MSL | — | 1 |
| RoHS / Halogen-Free | — | RoHS compliant, halogen-free |
| Avalanche Rated | — | 100% avalanche tested |