BSC022N04LS6ATMA1 vs BSC010N04LSATMA1 比較
詳細並排比較 BSC022N04LS6ATMA1 由 Infineon 與 BSC010N04LSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC022N04LS6ATMA1 | BSC010N04LSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS™ 6 (N-channel trench) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Ta | 27 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Maximum Pulsed Drain Current (IDM) | 139 A | — |
| On-Resistance RDS(on) max | 2.2 mOhm at VGS=10 V | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 79 W | — |
| 封裝 | SuperSO8 5x6 (PG-TDSON-8-1) | PG-TDSON-8 FL (SuperSO8 5x6) |
| 安裝類型 | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| 腳位數 | 8 | — |
| 工作溫度 | -55 C to +175 C (junction) | — |
| RoHS 狀態 | Compliant | — |
| Transistor Polarity | — | N-Channel |
| Drain-Source Breakdown Voltage (VDS) | — | 40 V |
| Gate-Source Voltage (VGS) Max | — | +/- 20 V |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Continuous Drain Current (ID, Ta=25C) | — | 38 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Max @ VGS=10V | — | 1.0 mOhm |
| On-Resistance RDS(on) Test Condition | — | VGS = 10 V, ID = 50 A |
| Gate Threshold Voltage VGS(th) Typ | — | 2 V |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (Tc=25C) | — | 139 W |
| Power Dissipation (Ta=25C) | — | 2.5 W |
| 工作溫度範圍 | — | -55C to +150C |
| MSL 等級 | — | 1 |
| RoHS / Halogen-Free | — | RoHS compliant, halogen-free |
| Avalanche Rated | — | 100% avalanche tested |