BSC022N04LS6ATMA1 vs BSC010N04LSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC022N04LS6ATMA1 disebabkan oleh Infineon dan BSC010N04LSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC010N04LSATMA1 BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon

BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon

BSC010N04LSATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC022N04LS6ATMA1 BSC010N04LSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS™ 6 (N-channel trench) OptiMOS 5
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at Ta 27 A —
Continuous Drain Current (ID) at Tc 100 A —
Maximum Pulsed Drain Current (IDM) 139 A —
On-Resistance RDS(on) max 2.2 mOhm at VGS=10 V —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 79 W —
Kemasan SuperSO8 5x6 (PG-TDSON-8-1) PG-TDSON-8 FL (SuperSO8 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Channel Type N-Channel —
Kiraan Pin 8 —
Suhu Operasi -55 C to +175 C (junction) —
Status RoHS Compliant —
Transistor Polarity — N-Channel
Drain-Source Breakdown Voltage (VDS) — 40 V
Gate-Source Voltage (VGS) Max — +/- 20 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Continuous Drain Current (ID, Ta=25C) — 38 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) Max @ VGS=10V — 1.0 mOhm
On-Resistance RDS(on) Test Condition — VGS = 10 V, ID = 50 A
Gate Threshold Voltage VGS(th) Typ — 2 V
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissipation (Tc=25C) — 139 W
Power Dissipation (Ta=25C) — 2.5 W
Gambaran Suhu Operasi — -55C to +150C
Aras MSL — 1
RoHS / Halogen-Free — RoHS compliant, halogen-free
Avalanche Rated — 100% avalanche tested

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