BSC027N10NS5ATMA1 vs BSC098N10NS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC027N10NS5ATMA1 dari Infineon dan BSC098N10NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC027N10NS5ATMA1 BSC098N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup NRND Aktif
Manufacturer Infineon Technologies —
Part Number BSC027N10NS5ATMA1 —
Technology OptiMOS 5 (100V) OptiMOS 5 (N-channel trench MOSFET)
Channel Type N-Channel —
Drain-Source Voltage (VDS) 100 V 100 V
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at Ta 23 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) 194 A [DATA_NEEDED: IDM]
On-Resistance RDS(on) Max at VGS=10V 2.7 mOhm —
Power Dissipation (Ta) 3 W 2.5 W
Power Dissipation (Tc) 214 W —
Paket PG-TSON-8-3 (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: Tj min/max] [DATA_NEEDED: Tj min/max]
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL rating] 1
Qualification Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) —
Continuous Drain Current (ID, Tc=25C) — 60 A
Continuous Drain Current (ID, Ta) — [DATA_NEEDED: ID Ta-rated value]
On-Resistance RDS(on) max @ VGS=10V — 9.8 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max +/-]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Power Dissipation (Tc=25C) — 69 W
Diode Continuous Forward Current (IS) — 63 A (Tc=25C)
Diode Pulse Current (IS,pulse) — 240 A (Tc=25C)
Diode Forward Voltage (VSD) typ — 0.9 V (IF=30 A, Tj=25C)
Diode Forward Voltage (VSD) max — 1.1 V (IF=30 A, Tj=25C)
Shipping Packaging — Tape & Reel (T/R)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon