BSC028N06NSTATMA1 vs BSC034N06NSATMA1 Perbandingan

Perbandingan bersamaan detil BSC028N06NSTATMA1 dari Infineon dan BSC034N06NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC028N06NSTATMA1 BSC034N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 5 —
Part Number Base BSC028N06NS —
Technology MOSFET N-Channel (OptiMOS 5) OptiMOS 5
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at TA=25C 24 A —
Continuous Drain Current (ID) at TC=25C 100 A 100 A
On-Resistance RDS(on) max at VGS=10V 2.8 mOhm 3.4 mOhm
Gate Threshold Voltage VGS(th) typ 2.5 V to 3.5 V —
Total Gate Charge Qg 37 nC @ VGS=10V —
Input Capacitance Ciss 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] —
Output Capacitance Coss 825 pF —
Reverse Transfer Capacitance Crss 56 pF —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 100 W —
Suhu Hubung Kerja -55C to +175C —
Paket PG-TDSON-8-7 (SuperSO8, 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Bebas Halogen Yes —
Level MSL 1 [DATA_NEEDED: MSL level]
AEC-Q101 Automotive Qualified [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] —
Polarity — N-Channel
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 74 W
Rentang Suhu Kerja — -55C to +150C

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