BSC028N06NSTATMA1 vs BSC034N06NSATMA1 比較

詳細並排比較 BSC028N06NSTATMA1 由 Infineon 與 BSC034N06NSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC028N06NSTATMA1 BSC028N06NSTATMA1 - 60V 2.8mΩ N-Ch OptiMOS 5 MOSFET | Infineon

BSC028N06NSTATMA1 - 60V 2.8mΩ N-Ch OptiMOS 5 MOSFET | Infineon

BSC028N06NSTATMA1 ✓ 啟用中
Infineon
BSC034N06NSATMA1 BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon

BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon

BSC034N06NSATMA1 ✓ 啟用中

規格比較

參數 BSC028N06NSTATMA1 BSC034N06NSATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Series OptiMOS 5 —
Part Number Base BSC028N06NS —
Technology MOSFET N-Channel (OptiMOS 5) OptiMOS 5
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at TA=25C 24 A —
Continuous Drain Current (ID) at TC=25C 100 A 100 A
On-Resistance RDS(on) max at VGS=10V 2.8 mOhm 3.4 mOhm
Gate Threshold Voltage VGS(th) typ 2.5 V to 3.5 V —
Total Gate Charge Qg 37 nC @ VGS=10V —
Input Capacitance Ciss 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] —
Output Capacitance Coss 825 pF —
Reverse Transfer Capacitance Crss 56 pF —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 100 W —
工作接面溫度 -55C to +175C —
封裝 PG-TDSON-8-7 (SuperSO8, 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6 mm)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant
無鹵素 Yes —
MSL 等級 1 [DATA_NEEDED: MSL level]
AEC-Q101 Automotive Qualified [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] —
Polarity — N-Channel
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 74 W
工作溫度範圍 — -55C to +150C

資料表與資源

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